Infineon OptiMOS Power Transistor Type P-Channel MOSFET, -19.5 A, 60 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ810P06LMATMA1

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Actuellement indisponible
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N° de stock RS:
284-805
Référence fabricant:
ISZ810P06LMATMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

-19.5A

Maximum Drain Source Voltage Vds

60V

Package Type

PG-TSDSON-8FL

Series

OptiMOS Power Transistor

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

81mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

83W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon MOSFET is an Advanced power transistor delivers exceptional performance and reliability, making it an Ideal choice for demanding industrial applications. The Infineon OptiMOS Power Transistor series excels in energy efficiency with its low on resistance characteristics, ensuring minimal energy loss during operation. Its robust design is fully qualified according to JEDEC standards, providing peace of mind for engineers seeking Durable components. Operating at 60V, it is tailored for high performance applications while maintaining low thermal resistance, allowing for effective heat management.

P channel configuration optimises current control

Logic level compatibility for easy interfacing

Avalanche tested for reliability under stress

Pb free lead plating meets environmental regulations

Halogen free construction supports cleaner production

Enhanced thermal characteristics for consistent operation

High continuous drain current for diverse applications

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