Infineon OptiMOS 6 Power Transistor 1 Type N-Channel MOSFET, 120 V Enhancement, 8-Pin PG-TSON-8 ISC030N12NM6ATMA1
- N° de stock RS:
- 284-783
- Référence fabricant:
- ISC030N12NM6ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
7,58 €
(TVA exclue)
9,18 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 07 septembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 3,79 € | 7,58 € |
| 20 - 198 | 3,41 € | 6,82 € |
| 200 - 998 | 3,145 € | 6,29 € |
| 1000 - 1998 | 2,915 € | 5,83 € |
| 2000 + | 2,615 € | 5,23 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 284-783
- Référence fabricant:
- ISC030N12NM6ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 120V | |
| Package Type | PG-TSON-8 | |
| Series | OptiMOS 6 Power Transistor | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 120V | ||
Package Type PG-TSON-8 | ||
Series OptiMOS 6 Power Transistor | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- Pays d'origine :
- DE
The Infineon MOSFET is a state of the ART Power Transistor designed for high frequency switching applications, boasting exceptional performance and efficiency. This N channel MOSFET is optimised for use in various industrial applications, ensuring Peak reliability even under demanding conditions. With its low on resistance and remarkable gate charge characteristics, it enhances performance in synchronous rectification and power conversion systems. The device operates efficiently at high temperatures, making it suitable for a range of applications across sectors. Its Compact PG TSON 8 3 package further enables space saving designs while ensuring superior thermal performance, making it a preferred choice for engineers seeking high quality power management solutions.
Very low on resistance minimizes power losses
High efficiency with excellent gate charge
Seamless operation in high frequency applications
High avalanche energy rating for durability
Operates effectively up to 175°C
Complies with RoHS standards for safety
MSL 1 classification for flexible handling
Optimised for synchronous rectification performance
Liens connexes
- Infineon OptiMOS 6 Power Transistor 1 Type N-Channel MOSFET 8-Pin PG-TSON-8 ISC030N12NM6ATMA1
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-TSON-8 IQE046N08LM5ATMA1
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-TSON-8 IQE022N06LM5CGSCATMA1
- Infineon OptiMOS 6 Power Transistor Type N-Channel MOSFET 120 V Enhancement, 8-Pin PG-TSDSON-8 ISZ106N12LM6ATMA1
- Infineon OptiMOS 6 Power Transistor Type N-Channel MOSFET 120 V Enhancement, 8-Pin PG-TSDSON-8 ISZ330N12LM6ATMA1
- Infineon OptiMOS 6 Power Transistor Type N-Channel MOSFET 120 V Enhancement, 8-Pin PG-TDSON-8 ISC073N12LM6ATMA1
- Infineon OptiMOS 6 Power Transistor 1 Type N-Channel MOSFET 8-Pin PG-TDSON-8 FL ISC037N12NM6ATMA1
- Infineon OptiMOS 6 Power Transistor Type N-Channel MOSFET 120 V Enhancement, 8-Pin PG-TDSON-8 ISC104N12LM6ATMA1