Infineon OptiMOS 6 Power Transistor 1 Type N-Channel MOSFET, 120 V Enhancement, 8-Pin PG-TSON-8 ISC030N12NM6ATMA1

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N° de stock RS:
284-783
Référence fabricant:
ISC030N12NM6ATMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Drain Source Voltage Vds

120V

Package Type

PG-TSON-8

Series

OptiMOS 6 Power Transistor

Mount Type

Surface

Pin Count

8

Channel Mode

Enhancement

Standards/Approvals

No

Number of Elements per Chip

1

Automotive Standard

No

The Infineon MOSFET is a state of the ART Power Transistor designed for high frequency switching applications, boasting exceptional performance and efficiency. This N channel MOSFET is optimised for use in various industrial applications, ensuring Peak reliability even under demanding conditions. With its low on resistance and remarkable gate charge characteristics, it enhances performance in synchronous rectification and power conversion systems. The device operates efficiently at high temperatures, making it suitable for a range of applications across sectors. Its Compact PG TSON 8 3 package further enables space saving designs while ensuring superior thermal performance, making it a preferred choice for engineers seeking high quality power management solutions.

Very low on resistance minimizes power losses

High efficiency with excellent gate charge

Seamless operation in high frequency applications

High avalanche energy rating for durability

Operates effectively up to 175°C

Complies with RoHS standards for safety

MSL 1 classification for flexible handling

Optimised for synchronous rectification performance

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