Infineon OptiMOS 6 Power Transistor 1 Type N-Channel MOSFET, 120 V Enhancement, 8-Pin PG-TDSON-8 FL ISC037N12NM6ATMA1
- N° de stock RS:
- 285-044
- Référence fabricant:
- ISC037N12NM6ATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 5000 unités)*
11 265,00 €
(TVA exclue)
13 630,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 07 septembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 5000 + | 2,253 € | 11 265,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 285-044
- Référence fabricant:
- ISC037N12NM6ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 120V | |
| Package Type | PG-TDSON-8 FL | |
| Series | OptiMOS 6 Power Transistor | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 120V | ||
Package Type PG-TDSON-8 FL | ||
Series OptiMOS 6 Power Transistor | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
The Infineon MOSFET features is a high performing N channel Power Transistor that delivers exceptional efficiency and reliability for a wide array of applications. Featuring innovative thermal characteristics, this component excels in demanding environments with temperatures reaching up to 175°C. Built using cutting edge OptiMOS technology, it ensures minimal energy losses and enhanced switching capabilities, making it Ideal for high frequency applications. Whether deployed in industrial settings or used in synchronous rectification, this device conforms to stringent RoHS compliance, ensuring it meets modern environmental standards.
Optimised for high frequency switching
Pb free lead plating for compliance
MSL 1 classified for reliability
Low reverse recovery charge improves efficiency
High avalanche energy rating for protection
Excellent gate charge reduces drive losses
Liens connexes
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