Infineon OptiMOS 6 Power Transistor Type N-Channel MOSFET, 62 A, 120 V Enhancement, 8-Pin PG-TSDSON-8 ISZ106N12LM6ATMA1

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Actuellement indisponible
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N° de stock RS:
285-060
Référence fabricant:
ISZ106N12LM6ATMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

62A

Maximum Drain Source Voltage Vds

120V

Package Type

PG-TSDSON-8

Series

OptiMOS 6 Power Transistor

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

10.6mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

94W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon MOSFET is power transistor stands out in high performance applications, designed to cater to the needs of modern electronic systems. Its Advanced N channel technology delivers remarkable efficiency and reliability, making it Ideal for high frequency switching operations. Crafted for professionals in the field, this product combines low on resistance with superior gate charge characteristics. This makes it a suitable choice for synchronous rectification and industrial applications.

Very low on resistance enhances efficiency

Optimised for high frequency switching

High avalanche energy rating for reliability

Excellent gate charge for quick response

Pb free lead plating for compliance

Operates from 55°C to 175°C

MSL 1 classified for manufacturing ease

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