Infineon HEXFET Type P-Channel MOSFET, 11 A, 55 V Enhancement, 3-Pin IPAK

N° de stock RS:: 919-4911
Référence fabricant:: IRFU9024NPBF
Fabricant:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 11 A, 55 V Enhancement, 3-Pin IPAK

Offre groupée disponible

Sous-total (1 tube de 75 unités)*

49,05 €

(TVA exclue)

59,325 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

En stock

Plus 2 850 unité(s) expédiée(s) à partir du 05 janvier 2026

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Unité	Prix par unité	le tube*
75 - 75	0,654 €	49,05 €
150 - 300	0,543 €	40,73 €
375 - 675	0,503 €	37,73 €
750 - 1800	0,471 €	35,33 €
1875 +	0,438 €	32,85 €

*Prix donné à titre indicatif

N° de stock RS:: 919-4911
Référence fabricant:: IRFU9024NPBF
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	11A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	IPAK
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	175mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	38W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	-1.6V
	Typical Gate Charge Qg @ Vgs	19nC
	Maximum Operating Temperature	150°C
	Length	6.73mm
	Width	2.39 mm
	Height	6.22mm
	Standards/Approvals	No
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 11A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type IPAK
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 175mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 38W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf -1.6V
	Typical Gate Charge Qg @ Vgs 19nC
	Maximum Operating Temperature 150°C
	Length 6.73mm
	Width 2.39 mm
	Height 6.22mm
	Standards/Approvals No
	Automotive Standard No

Pays d'origine :: MX

Infineon HEXFET Series MOSFET, 11A Maximum Continuous Drain Current, 38W Maximum Power Dissipation - IRFU9024NPBF

This P-channel MOSFET is intended for high-efficiency power management applications. It has a maximum continuous drain current of 11A and a maximum drain-source voltage of 55V, adept at handling significant loads while ensuring reliability in various operational conditions. Its through-hole mounting type allows for seamless integration into existing designs, making it a key component for professionals in automation and electronics.

Features & Benefits

• Low Rds(on) of 175mΩ enhances energy efficiency

• Maximum power dissipation of 38W supports robust performance

• Single transistor configuration simplifies design processes

• Complies with lead-free standards for environmentally conscious applications

Applications

• Suitable for power supplies and conversion circuits

• Utilised in motor control systems for effective operation

• Integrated into battery management systems for improved performance

• Applicable in automotive environments for dependable power handling

• Ideal for industrial automation equipment requiring robust performance

What is the temperature range for stable operation?

The component operates effectively within a temperature range of -55°C to +150°C, ensuring reliable performance in various environments.

How can it handle high power loads efficiently?

With a maximum power dissipation of 38W and low Rds(on) of 175mΩ, it manages high power loads with minimal energy loss.

Is it compatible with a standard PCB layout?

Yes, the through-hole mounting type is compatible with standard PCB layouts, facilitating straightforward integration.

What criteria should be considered for gate voltage?

A gate-source voltage range of -20V to +20V provides flexibility; optimum performance is achieved at 10V for effective operation.

How does it contribute to efficiency in power management?

Its low on-resistance and high current capability maximise efficiency in various power management scenarios.