Infineon HEXFET Type P-Channel MOSFET, 31 A, 55 V Enhancement, 3-Pin IPAK

N° de stock RS:: 919-5021
Référence fabricant:: IRFU5305PBF
Fabricant:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 31 A, 55 V Enhancement, 3-Pin IPAK

Sous-total (1 tube de 75 unités)*

71,625 €

(TVA exclue)

86,70 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

En stock

2 925 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution

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Unité	Prix par unité	le tube*
75 +	0,955 €	71,63 €

*Prix donné à titre indicatif

N° de stock RS:: 919-5021
Référence fabricant:: IRFU5305PBF
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	31A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	IPAK
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	65mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	-1.3V
	Maximum Power Dissipation Pd	110W
	Typical Gate Charge Qg @ Vgs	63nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Height	6.1mm
	Width	2.3mm
	Length	6.6mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 31A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type IPAK
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 65mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf -1.3V
	Maximum Power Dissipation Pd 110W
	Typical Gate Charge Qg @ Vgs 63nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Height 6.1mm
	Width 2.3mm
	Length 6.6mm
	Automotive Standard No

Pays d'origine :: MX

Infineon HEXFET Series MOSFET, 31A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRFU5305PBF

This MOSFET is engineered for efficiency and reliability across diverse electronic applications. The advanced processing techniques incorporated enable low resistance per silicon area, making it suitable for high-performance circuit designs. Its robust capabilities accommodate a wide array of drain current and voltage specifications, ensuring optimal use in automation and electrical systems.

Features & Benefits

• High current handling capability of up to 31A

• Operates effectively in enhancement mode for improved performance

• Low static drain-to-source on-resistance for efficient energy consumption

• Broad gate-to-source voltage range of ±20V for versatile control

• Can withstand power dissipation levels up to 110W

• Compact TO-251 IPAK package facilitates space-efficient installation

Applications

• Ideal for power management in consumer electronics

• Employed in renewable energy systems for efficient control

• Suitable for power in electric vehicles

• Utilised in high-frequency switching power supplies for enhanced performance

What operating temperature range can be maintained?

The component can operate within -55°C to +175°C, suitable for various environments.

How does installation affect performance?

Proper installation in space-constrained applications optimises heat dissipation, thus enhancing reliability and performance.

What should be considered for heat management during use?

Ensuring adequate cooling methods is crucial due to its maximum power dissipation of 110 W when operating at high drain currents.

What type of circuit designs benefit from its specifications?

The low on-resistance and high current rating make it well-suited for designs focused on efficiency and minimising energy losses in applications such as motor control and power supplies.

Can it be used in parallel configurations?

Yes, it is suitable for parallel circuits; however, balancing methods should be considered to ensure uniform current distribution across devices.