Infineon HEXFET Type P-Channel MOSFET, 11 A, 55 V Enhancement, 3-Pin TO-252

N° de stock RS:: 168-7942
Référence fabricant:: IRFR9024NTRPBF
Fabricant:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 11 A, 55 V Enhancement, 3-Pin TO-252

Offre groupée disponible

Sous-total (1 bobine de 2000 unités)*

692,00 €

(TVA exclue)

838,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

En stock

10 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution

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Unité	Prix par unité	la bobine*
2000 - 2000	0,346 €	692,00 €
4000 +	0,329 €	658,00 €

*Prix donné à titre indicatif

N° de stock RS:: 168-7942
Référence fabricant:: IRFR9024NTRPBF
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	11A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	175mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	38W
	Typical Gate Charge Qg @ Vgs	19nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	-1.6V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	6.22 mm
	Height	2.39mm
	Length	6.73mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 11A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 175mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 38W
	Typical Gate Charge Qg @ Vgs 19nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf -1.6V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 6.22 mm
	Height 2.39mm
	Length 6.73mm
	Automotive Standard No

Pays d'origine :: MX

Infineon HEXFET Series MOSFET, 11A Maximum Continuous Drain Current, 38W Maximum Power Dissipation - IRFR9024NTRPBF

This P-channel MOSFET, utilising HEXFET technology, delivers efficient performance across a range of electronic applications. Its robust attributes make it a Crucial component for users in automation, electronics, as well as the electrical and mechanical sectors. The product is adept at managing high current loads while ensuring effective control in power circuits.

Features & Benefits

• Maximum continuous drain current of 11A facilitates high-performance applications

• Can withstand drain-source voltage of up to 55V for increased reliability

• Low RDS(on) of 175 mΩ minimises power loss during operation

• Enhancement mode design optimises efficiency for various uses

• DPAK TO-252 surface mount package simplifies PCB integration and assembly

Applications

• Effective energy management in power supply circuits

• Suitable for motor control needing high current

• Utilised in DC-DC converters for improved efficiency

• Ideal for load switching due to Rapid response times

• Employed in industrial automation systems for added reliability

What is the maximum power dissipation of this component?

It has a maximum power dissipation capability of 38W.

How does the product handle gate voltages?

The gate can accommodate voltages ranging from -20 V to +20 V, allowing design flexibility.

What is the thermal performance of the device?

It operates safely at a maximum temperature of 150 °C, ensuring reliability in diverse environments.

Is it easy to mount on a PCB?

Yes, the DPAK TO-252 package enables straightforward surface mounting on printed circuit boards.

How does this MOSFET perform under varying temperatures?

It remains functional within a wide temperature range of -55 °C to +150 °C, catering to diverse application needs.