Infineon HEXFET Type N-Channel MOSFET, 17 A, 55 V Enhancement, 3-Pin IPAK
- N° de stock RS:
- 913-3803
- Référence fabricant:
- IRLU024NPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 75 unités)*
55,575 €
(TVA exclue)
67,275 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 450 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 1 050 unité(s) expédiée(s) à partir du 04 septembre 2026
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Unité | Prix par unité | le tube* |
|---|---|---|
| 75 - 75 | 0,741 € | 55,58 € |
| 150 - 300 | 0,586 € | 43,95 € |
| 375 - 675 | 0,549 € | 41,18 € |
| 750 - 1800 | 0,511 € | 38,33 € |
| 1875 + | 0,467 € | 35,03 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 913-3803
- Référence fabricant:
- IRLU024NPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | IPAK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Maximum Power Dissipation Pd | 45W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 6.22mm | |
| Width | 2.39mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type IPAK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Gate Source Voltage Vgs 16V | ||
Maximum Power Dissipation Pd 45W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 6.22mm | ||
Width 2.39mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 17A Maximum Continuous Drain Current, 55V Maximum Drain Source Voltage - IRLU024NPBF
This MOSFET is a high-performance power device designed specifically for demanding applications within the electrical and mechanical industries. It features an enhancement mode configuration and operates effectively within a temperature range of -55°C to +175°C. With compact dimensions of 6.73mm in length, 2.39mm in width, and 6.22mm in height, it can be easily integrated into various electronic setups.
Features & Benefits
• Achieves a maximum continuous drain current of 17A
• Offers a maximum drain-source voltage of 55V
• Supports a maximum power dissipation of 45W
• Rugged design suitable for high-temperature applications
• Compatible with through-hole mounting for versatile installation
Applications
• Used in motor control systems for precise regulation
• Suitable for switch-mode power supplies for efficient energy conversion
• Effective in industrial automation equipment for reliable performance
• Utilised in consumer electronics for improved power management
• Ideal for power management circuits requiring high current
What is the significance of the on-resistance in this device?
The low Rds(on) of 65mΩ ensures minimal energy loss during operation, enhancing the overall efficiency of circuits designed using this specific device. This characteristic also supports the capacity for higher current without overheating issues in electronic applications.
How does this MOSFET perform in high-temperature environments?
This device is engineered to function reliably in temperatures ranging from -55°C to +175°C, making it suitable for environments that experience significant thermal stress, such as industrial machinery and automotive applications.
Can it handle pulsed drain currents?
Yes, the device supports pulsed drain currents up to 72A, providing flexibility in various dynamic switching applications where short bursts of high current are necessary.
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