Infineon CoolMOS CE Type N-Channel MOSFET, 5.7 A, 800 V Enhancement, 3-Pin TO-252 IPD80R1K0CEATMA1

N° de stock RS:: 914-0223
Référence fabricant:: IPD80R1K0CEATMA1
Fabricant:: Infineon

Infineon CoolMOS CE Type N-Channel MOSFET, 5.7 A, 800 V Enhancement, 3-Pin TO-252 IPD80R1K0CEATMA1

Sous-total (1 paquet de 10 unités)*

9,60 €

(TVA exclue)

11,60 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

En stock

2 250 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution

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Unité	Prix par unité	le paquet*
10 +	0,96 €	9,60 €

*Prix donné à titre indicatif

N° de stock RS:: 914-0223
Référence fabricant:: IPD80R1K0CEATMA1
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	5.7A
	Maximum Drain Source Voltage Vds	800V
	Series	CoolMOS CE
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	950mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	83W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	31nC
	Maximum Operating Temperature	150°C
	Length	6.73mm
	Standards/Approvals	No
	Height	2.41mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 5.7A
	Maximum Drain Source Voltage Vds 800V
	Series CoolMOS CE
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 950mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 83W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 31nC
	Maximum Operating Temperature 150°C
	Length 6.73mm
	Standards/Approvals No
	Height 2.41mm
	Automotive Standard No

Statut RoHS non applicable

Infineon CoolMOS™ CE Series MOSFET, 5.7A Maximum Continuous Drain Current, 83W Maximum Power Dissipation - IPD80R1K0CEATMA1

This MOSFET provides solutions for power management and general electronics, leveraging Advanced CoolMOS CE technology with high voltage capabilities up to 800V. It boasts high efficiency and low on-state resistance, optimising design while enhancing reliability.

Features & Benefits

• Increased power density allows for more Compact system designs

• Reduced cooling requirements lead to cost savings for systems

• Lower operating temperatures enhance system reliability

• High Peak current capability supports rigorous applications

• Reliable dv/dt rating ensures stability under Rapid voltage changes

• Complies with RoHS standards for environmentally sound use

Applications

• Used in LED lighting solutions for retrofit installations

• Suitable for QR flyback topology in power supplies

• Effective within automotive power distribution systems

• Ideal for various high-voltage industrial

How does the MOSFET enhance system performance in power management?

It improves power density and reduces thermal requirements, leading to enhanced efficiency and lower energy losses during operation.

What are the benefits of using this device in LED lighting applications?

It delivers dependable performance with less heat generation, contributing to longevity and stability in lighting systems.

Is this compatible with high-frequency applications?

Yes, its low gate charge and high Peak current capabilities make it apt for high-frequency operations, ensuring minimal switching losses.

What is the maximum continuous drain current for this device?

The maximum continuous drain current is rated at 5.7A, making it suitable for various power-intensive applications.

What temperature range can it operate within?

It operates effectively between -55°C and +150°C, offering versatility across different environments.