Infineon CoolMOS CE Type N-Channel MOSFET, 5.7 A, 800 V Enhancement, 3-Pin TO-252

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Sous-total (1 bobine de 2500 unités)*

1 440,00 €

(TVA exclue)

1 742,50 €

(TVA incluse)

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  • Expédition à partir du 27 avril 2026
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Unité
Prix par unité
la bobine*
2500 +0,576 €1 440,00 €

*Prix donné à titre indicatif

N° de stock RS:
165-8015
Référence fabricant:
IPD80R1K0CEATMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5.7A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-252

Series

CoolMOS CE

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

950mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

83W

Typical Gate Charge Qg @ Vgs

31nC

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

6.73mm

Height

2.41mm

Width

6.22 mm

Standards/Approvals

No

Automotive Standard

No

Statut RoHS non applicable

Pays d'origine :
MY

Infineon CoolMOS™ CE Series MOSFET, 5.7A Maximum Continuous Drain Current, 83W Maximum Power Dissipation - IPD80R1K0CEATMA1


This MOSFET provides solutions for power management and general electronics, leveraging Advanced CoolMOS CE technology with high voltage capabilities up to 800V. It boasts high efficiency and low on-state resistance, optimising design while enhancing reliability.

Features & Benefits


• Increased power density allows for more Compact system designs

• Reduced cooling requirements lead to cost savings for systems

• Lower operating temperatures enhance system reliability

• High Peak current capability supports rigorous applications

• Reliable dv/dt rating ensures stability under Rapid voltage changes

• Complies with RoHS standards for environmentally sound use

Applications


• Used in LED lighting solutions for retrofit installations

• Suitable for QR flyback topology in power supplies

• Effective within automotive power distribution systems

• Ideal for various high-voltage industrial

How does the MOSFET enhance system performance in power management?


It improves power density and reduces thermal requirements, leading to enhanced efficiency and lower energy losses during operation.

What are the benefits of using this device in LED lighting applications?


It delivers dependable performance with less heat generation, contributing to longevity and stability in lighting systems.

Is this compatible with high-frequency applications?


Yes, its low gate charge and high Peak current capabilities make it apt for high-frequency operations, ensuring minimal switching losses.

What is the maximum continuous drain current for this device?


The maximum continuous drain current is rated at 5.7A, making it suitable for various power-intensive applications.

What temperature range can it operate within?


It operates effectively between -55°C and +150°C, offering versatility across different environments.

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