Infineon HEXFET Type N-Channel MOSFET, 6.3 A, 20 V Enhancement, 3-Pin SOT-23

N° de stock RS:: 913-4076
Référence fabricant:: IRLML6244TRPBF
Fabricant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 6.3 A, 20 V Enhancement, 3-Pin SOT-23

Sous-total (1 bobine de 3000 unités)*

303,00 €

(TVA exclue)

366,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

6 000 unité(s) expédiée(s) à partir du 17 décembre 2026
Plus 6 000 unité(s) expédiée(s) à partir du 14 janvier 2027
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Unité	Prix par unité	la bobine*
3000 +	0,101 €	303,00 €

*Prix donné à titre indicatif

N° de stock RS:: 913-4076
Référence fabricant:: IRLML6244TRPBF
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	6.3A
	Maximum Drain Source Voltage Vds	20V
	Series	HEXFET
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	27mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	8.9nC
	Maximum Power Dissipation Pd	1.3W
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	12V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	1.4mm
	Length	3.04mm
	Height	1.02mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 6.3A
	Maximum Drain Source Voltage Vds 20V
	Series HEXFET
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 27mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 8.9nC
	Maximum Power Dissipation Pd 1.3W
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 12V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 1.4mm
	Length 3.04mm
	Height 1.02mm
	Automotive Standard No

Pays d'origine :: PH

Infineon HEXFET Series MOSFET, 20V Maximum Drain Source Voltage, 6.3A Maximum Continuous Drain Current - IRLML6244TRPBF

This MOSFET is a low-voltage switching transistor designed for surface-mount applications where compact power handling is required. It functions as an N-channel enhancement device suitable for power-management roles in densely populated electronic assemblies. The component operates across a wide temperature range and tolerates standard gate-drive excursions, making it appropriate for high-efficiency DC-DC conversion and general switching duties.

Features and Benefits:

• Very low on-resistance 27mΩ reduces conduction losses
• Continuous drain current 6.3A supports higher load currents
• Drain-source voltage rating 20V enables low-voltage power designs
• Maximum power dissipation 1.3W allows sustained thermal loading
• Gate charge 8.9nC enables efficient switching performance
• Gate-source tolerance 12V permits robust drive margin

Applications

• Suitable for DC-DC converter stages in compact electronics
• Ideal for battery management and portable power circuits
• Used with switching regulators in telecom equipment
• Can be used for load switching in small motor drivers
• Useful for power path control in consumer devices

What temperature extremes can it withstand in operation?

It is rated for operation from -55°C up to 150°C, allowing use in harsh thermal environments.

How does package choice affect thermal and assembly considerations?

The SOT-23 surface-mount package minimises board footprint and supports automated placement while limiting thermal conduction compared with larger packages.

What pin configuration is available for PCB layout?

The device presents a three-pin arrangement compatible with standard SOT-23 land patterns for straightforward routing.

How does channel behaviour influence design topology?

As an N-channel enhancement device, it requires a positive gate drive relative to source to switch and is suited to low-side switching or synchronous rectification roles.