Infineon HEXFET N-Channel MOSFET, 6.3 A, 20 V Enhancement, 3-Pin SOT-23 IRLML6244TRPBF
- N° de stock RS:
- 737-7228
- Numéro d'article Distrelec:
- 304-45-316
- Référence fabricant:
- IRLML6244TRPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 20 unités)*
5,78 €
(TVA exclue)
7,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 6 000 unité(s) expédiée(s) à partir du 24 décembre 2026
- Plus 6 000 unité(s) expédiée(s) à partir du 21 janvier 2027
- Plus 6 000 unité(s) expédiée(s) à partir du 10 mai 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 - 140 | 0,289 € | 5,78 € |
| 160 - 740 | 0,125 € | 2,50 € |
| 760 - 1480 | 0,109 € | 2,18 € |
| 1500 + | 0,094 € | 1,88 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 737-7228
- Numéro d'article Distrelec:
- 304-45-316
- Référence fabricant:
- IRLML6244TRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 6.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | HEXFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 27mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 8.9nC | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.3W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Width | 1.4mm | |
| Standards/Approvals | No | |
| Height | 1.02mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 6.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series HEXFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 27mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 8.9nC | ||
Maximum Gate Source Voltage Vgs 12V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.3W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Width 1.4mm | ||
Standards/Approvals No | ||
Height 1.02mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 20V Maximum Drain Source Voltage, 6.3A Maximum Continuous Drain Current - IRLML6244TRPBF
This MOSFET is a low-voltage switching transistor designed for surface-mount applications where compact power handling is required. It functions as an N-channel enhancement device suitable for power-management roles in densely populated electronic assemblies. The component operates across a wide temperature range and tolerates standard gate-drive excursions, making it appropriate for high-efficiency DC-DC conversion and general switching duties.
Features and Benefits:
• Very low on-resistance 27mΩ reduces conduction losses
• Continuous drain current 6.3A supports higher load currents
• Drain-source voltage rating 20V enables low-voltage power designs
• Maximum power dissipation 1.3W allows sustained thermal loading
• Gate charge 8.9nC enables efficient switching performance
• Gate-source tolerance 12V permits robust drive margin
• Continuous drain current 6.3A supports higher load currents
• Drain-source voltage rating 20V enables low-voltage power designs
• Maximum power dissipation 1.3W allows sustained thermal loading
• Gate charge 8.9nC enables efficient switching performance
• Gate-source tolerance 12V permits robust drive margin
Applications
• Suitable for DC-DC converter stages in compact electronics
• Ideal for battery management and portable power circuits
• Used with switching regulators in telecom equipment
• Can be used for load switching in small motor drivers
• Useful for power path control in consumer devices
• Ideal for battery management and portable power circuits
• Used with switching regulators in telecom equipment
• Can be used for load switching in small motor drivers
• Useful for power path control in consumer devices
What temperature extremes can it withstand in operation?
It is rated for operation from -55°C up to 150°C, allowing use in harsh thermal environments.
How does package choice affect thermal and assembly considerations?
The SOT-23 surface-mount package minimises board footprint and supports automated placement while limiting thermal conduction compared with larger packages.
What pin configuration is available for PCB layout?
The device presents a three-pin arrangement compatible with standard SOT-23 land patterns for straightforward routing.
How does channel behaviour influence design topology?
As an N-channel enhancement device, it requires a positive gate drive relative to source to switch and is suited to low-side switching or synchronous rectification roles.
Liens connexes
- Infineon HEXFET Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23