Infineon HEXFET N-Channel MOSFET, 6.3 A, 20 V Enhancement, 3-Pin SOT-23 IRLML6244TRPBF
- N° de stock RS:
- 737-7228
- Numéro d'article Distrelec:
- 304-45-316
- Référence fabricant:
- IRLML6244TRPBF
- Fabricant:
- Infineon
Sous-total (1 paquet de 20 unités)*
5,78 €
(TVA exclue)
7,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- 6 000 unité(s) expédiée(s) à partir du 10 mai 2027
- Plus 6 000 unité(s) expédiée(s) à partir du 30 septembre 2027
Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 - 140 | 0,289 € | 5,78 € |
| 160 - 740 | 0,125 € | 2,50 € |
| 760 - 1480 | 0,109 € | 2,18 € |
| 1500 + | 0,094 € | 1,88 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 737-7228
- Numéro d'article Distrelec:
- 304-45-316
- Référence fabricant:
- IRLML6244TRPBF
- Fabricant:
- Infineon
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 6.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | HEXFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 27mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.3W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 8.9nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | -12V, +12V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4mm | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 6.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series HEXFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 27mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.3W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 8.9nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs -12V, +12V | ||
Maximum Operating Temperature 150°C | ||
Width 1.4mm | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Height 1.02mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 20V Maximum Drain Source Voltage, 6.3A Maximum Continuous Drain Current - IRLML6244TRPBF
Features and Benefits:
• Continuous drain current 6.3A supports higher load currents
• Drain-source voltage rating 20V enables low-voltage power designs
• Maximum power dissipation 1.3W allows sustained thermal loading
• Gate charge 8.9nC enables efficient switching performance
• Gate-source tolerance 12V permits robust drive margin
Applications
• Ideal for battery management and portable power circuits
• Used with switching regulators in telecom equipment
• Can be used for load switching in small motor drivers
• Useful for power path control in consumer devices
What temperature extremes can it withstand in operation?
How does package choice affect thermal and assembly considerations?
What pin configuration is available for PCB layout?
How does channel behaviour influence design topology?
Liens connexes
- Infineon HEXFET N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET N-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
