Infineon SIPMOS Type N-Channel MOSFET, 2.6 A, 60 V Enhancement, 4-Pin SOT-223

Voir l’ensemble des MOSFETs
Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
911-4978
Référence fabricant:
BSP318SH6327XTSA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.6A

Maximum Drain Source Voltage Vds

60V

Series

SIPMOS

Package Type

SOT-223

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

150mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

14nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.8W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Width

3.5 mm

Height

1.6mm

Length

6.5mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Pays d'origine :
MY

Infineon SIPMOS® N-Channel MOSFETs


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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