Infineon SIPMOS Type P-Channel MOSFET, 2.9 A, 60 V Enhancement, 4-Pin SOT-223
- N° de stock RS:
- 178-5073
- Référence fabricant:
- BSP613PH6327XTSA1
- Fabricant:
- Infineon
Offre groupée disponible
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506,00 €
(TVA exclue)
612,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- Plus 13 000 unité(s) expédiée(s) à partir du 06 août 2026
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 1000 - 1000 | 0,506 € | 506,00 € |
| 2000 - 2000 | 0,481 € | 481,00 € |
| 3000 + | 0,462 € | 462,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 178-5073
- Référence fabricant:
- BSP613PH6327XTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2.9A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-223 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 130mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 10.8W | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.5mm | |
| Length | 40mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2.9A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-223 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 130mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 10.8W | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Operating Temperature 175°C | ||
Height 1.5mm | ||
Length 40mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS Series MOSFET, 60V Maximum Drain Source Voltage, 2.9A Maximum Continuous Drain Current - BSP613PH6327XTSA1
This MOSFET is a P-channel enhancement-mode transistor designed for surface-mount power switching in demanding environments. It delivers controlled gate-driven switching for automotive and industrial systems, offering a combination of moderate current handling and temperature tolerance to support elevated-temperature operation and compact board layouts.
Features and Benefits:
• 60V drain-source rating enables medium-voltage switching
• 2.9A continuous drain current supports steady load delivery
• 130mΩ maximum Rds(on) reduces conduction losses
• 22nC typical gate charge simplifies gate-drive sizing
• 10.8W maximum power dissipation allows sustained power handling
• -55°C to 175°C operating range suits wide temperature extremes
• 2.9A continuous drain current supports steady load delivery
• 130mΩ maximum Rds(on) reduces conduction losses
• 22nC typical gate charge simplifies gate-drive sizing
• 10.8W maximum power dissipation allows sustained power handling
• -55°C to 175°C operating range suits wide temperature extremes
Applications
• Suitable for load switching in automotive electronics
• Ideal for industrial high-temperature control circuits
• Used with compact power regulators on surface-mount designs
• Can be used for polarity and reverse-current protection arrangements
• Used for low-to-moderate current battery management functions
• Ideal for industrial high-temperature control circuits
• Used with compact power regulators on surface-mount designs
• Can be used for polarity and reverse-current protection arrangements
• Used for low-to-moderate current battery management functions
What mounting style is required for assembly?
It uses a SOT-223 4-pin surface-mount package that is compatible with standard SMT reflow processes and common PCB layout footprints.
What gate voltage limits should designers observe?
The maximum permissible gate-to-source voltage is 20V, so gate-drive circuitry must remain within this threshold to avoid device stress.
How does forward voltage affect system design?
The forward voltage of approximately 1.1V informs power-loss calculations during conduction and helps determine thermal management needs in the application.
Is this device suitable for automotive-grade projects?
It meets AEC‑Q101 criteria, making it appropriate for many automotive electronic module implementations.
Liens connexes
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