Infineon SIPMOS Type P-Channel MOSFET, 1.17 A, 60 V Enhancement, 4-Pin SOT-223
- N° de stock RS:
- 178-5070
- Référence fabricant:
- BSP315PH6327XTSA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 1000 unités)*
199,00 €
(TVA exclue)
241,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- 9 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Unité | Prix par unité | la bobine* |
|---|---|---|
| 1000 - 1000 | 0,199 € | 199,00 € |
| 2000 - 2000 | 0,194 € | 194,00 € |
| 3000 + | 0,189 € | 189,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 178-5070
- Référence fabricant:
- BSP315PH6327XTSA1
- Fabricant:
- Infineon
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 1.17A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-223 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 800mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -0.97V | |
| Maximum Power Dissipation Pd | 1.8W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 5.2nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.6mm | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 1.17A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-223 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 800mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -0.97V | ||
Maximum Power Dissipation Pd 1.8W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 5.2nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.6mm | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS Series MOSFET, 60V Maximum Drain Source Voltage, 1.8W Maximum Power Dissipation - BSP315PH6327XTSA1
Features and Benefits:
• 1.17A continuous drain current for small-signal power delivery
• 800 mΩ maximum RDS(on) for reduced conduction losses
• 5.2 nC typical gate charge for efficient gate drive
• 1.8W power dissipation enabling sustained low-power operation
• AEC‑Q101 qualification for automotive-grade stress tolerance
Applications
• Ideal for reverse-polarity protection in automotive electronics
• Used with low-power DC/DC converters for high-side switching
• Can be used for load disconnect in telematics modules
• Suitable for compact power-control boards requiring surface mount
What temperature range can it operate within?
Which package and mounting method does it use?
How many pins are available for circuit connections?
What maximum gate voltage should be observed during use?
Liens connexes
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