Infineon SIPMOS Type P-Channel MOSFET, 1.17 A, 60 V Enhancement, 4-Pin SOT-223
- N° de stock RS:
- 178-5070
- Référence fabricant:
- BSP315PH6327XTSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 bobine de 1000 unités)*
199,00 €
(TVA exclue)
241,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 9 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 1000 - 1000 | 0,199 € | 199,00 € |
| 2000 - 2000 | 0,194 € | 194,00 € |
| 3000 + | 0,189 € | 189,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 178-5070
- Référence fabricant:
- BSP315PH6327XTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 1.17A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-223 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 800mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.8W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 5.2nC | |
| Forward Voltage Vf | -0.97V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 3.5 mm | |
| Length | 6.5mm | |
| Height | 1.6mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 1.17A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-223 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 800mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.8W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 5.2nC | ||
Forward Voltage Vf -0.97V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 3.5 mm | ||
Length 6.5mm | ||
Height 1.6mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Liens connexes
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223 BSP315PH6327XTSA1
- Infineon SIPMOS Type P-Channel MOSFET 250 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type P-Channel MOSFET 250 V Enhancement, 4-Pin SOT-223 BSP92PH6327XTSA1
- Infineon SIPMOS Type P-Channel MOSFET 250 V Enhancement, 4-Pin SOT-223 BSP317PH6327XTSA1
- Infineon SIPMOS Type P-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223 BSP613PH6327XTSA1