Infineon SIPMOS Type N-Channel MOSFET, 1.8 A, 60 V Enhancement, 4-Pin SOT-223 BSP295H6327XTSA1
- N° de stock RS:
- 445-2269
- Référence fabricant:
- BSP295H6327XTSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
6,53 €
(TVA exclue)
7,90 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 1,306 € | 6,53 € |
| 50 - 120 | 1,176 € | 5,88 € |
| 125 + | 1,088 € | 5,44 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 445-2269
- Référence fabricant:
- BSP295H6327XTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-223 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 300mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.8W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Height | 1.6mm | |
| Width | 3.5mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-223 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 300mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.8W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Height 1.6mm | ||
Width 3.5mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS® Series MOSFET, 1.8A Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP295H6327XTSA1
This MOSFET is engineered for high-performance applications in automation and electronics. Its N-channel configuration combined with an efficient surface mount design allows for effective current control, making it suitable for a range of industrial applications. It supports a maximum drain-source voltage of 60V, ensuring consistent performance for various projects.
Features & Benefits
• Continuously handles a drain current of 1.8A
• Low maximum drain-source resistance of 300mΩ
• Wide gate-source voltage range from -20V to +20V
• Qualified to AEC-Q101 automotive standard for reliability
Applications
• Power management systems for efficient output control
• Motor drives for reliable switching operations
• Signal amplification in various electronic devices
• Automotive electronic control units
What is the typical power dissipation of the component?
It can dissipate up to 1.8W under specified conditions for effective heat management during operation.
How does the gate threshold voltage affect performance?
The maximum gate threshold voltage is 1.8V, which enables the MOSFET to achieve optimal performance at low input levels.
Can this component handle pulsed drain currents?
Yes, it is rated for pulsed drain current up to 6A, allowing it to effectively manage transient conditions.
What packaging options are available?
The MOSFET is available in a SOT-223 surface mount package, optimised for space-efficient designs.
Is the device compliant with environmental standards?
It features Pb-free lead plating and adheres to RoHS compliance, meeting contemporary environmental regulations.
Liens connexes
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