Infineon SIPMOS Type N-Channel MOSFET, 1.8 A, 60 V Enhancement, 4-Pin SOT-223 BSP295H6327XTSA1

N° de stock RS:: 445-2269
Référence fabricant:: BSP295H6327XTSA1
Fabricant:: Infineon

Infineon SIPMOS Type N-Channel MOSFET, 1.8 A, 60 V Enhancement, 4-Pin SOT-223 BSP295H6327XTSA1

Offre groupée disponible

Sous-total (1 paquet de 5 unités)*

3,96 €

(TVA exclue)

4,79 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

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Unité	Prix par unité	le paquet*
5 - 45	0,792 €	3,96 €
50 - 120	0,704 €	3,52 €
125 - 245	0,658 €	3,29 €
250 - 495	0,608 €	3,04 €
500 +	0,56 €	2,80 €

*Prix donné à titre indicatif

N° de stock RS:: 445-2269
Référence fabricant:: BSP295H6327XTSA1
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	1.8A
	Maximum Drain Source Voltage Vds	60V
	Series	SIPMOS
	Package Type	SOT-223
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	300mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	1.8W
	Typical Gate Charge Qg @ Vgs	14nC
	Forward Voltage Vf	1.1V
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	6.5mm
	Width	3.5 mm
	Standards/Approvals	No
	Height	1.6mm
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 1.8A
	Maximum Drain Source Voltage Vds 60V
	Series SIPMOS
	Package Type SOT-223
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 300mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 1.8W
	Typical Gate Charge Qg @ Vgs 14nC
	Forward Voltage Vf 1.1V
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 6.5mm
	Width 3.5 mm
	Standards/Approvals No
	Height 1.6mm
	Automotive Standard AEC-Q101

Infineon SIPMOS® Series MOSFET, 1.8A Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP295H6327XTSA1

This MOSFET is engineered for high-performance applications in automation and electronics. Its N-channel configuration combined with an efficient surface mount design allows for effective current control, making it suitable for a range of industrial applications. It supports a maximum drain-source voltage of 60V, ensuring consistent performance for various projects.

Features & Benefits

• Continuously handles a drain current of 1.8A

• Low maximum drain-source resistance of 300mΩ

• Wide gate-source voltage range from -20V to +20V

• Qualified to AEC-Q101 automotive standard for reliability

Applications

• Power management systems for efficient output control

• Motor drives for reliable switching operations

• Signal amplification in various electronic devices

• Automotive electronic control units

What is the typical power dissipation of the component?

It can dissipate up to 1.8W under specified conditions for effective heat management during operation.

How does the gate threshold voltage affect performance?

The maximum gate threshold voltage is 1.8V, which enables the MOSFET to achieve optimal performance at low input levels.

Can this component handle pulsed drain currents?

Yes, it is rated for pulsed drain current up to 6A, allowing it to effectively manage transient conditions.

What packaging options are available?

The MOSFET is available in a SOT-223 surface mount package, optimised for space-efficient designs.

Is the device compliant with environmental standards?

It features Pb-free lead plating and adheres to RoHS compliance, meeting contemporary environmental regulations.