Infineon SIPMOS Type P-Channel MOSFET, 1.9 A, 60 V Enhancement, 4-Pin SOT-223 BSP171PH6327XTSA1
- N° de stock RS:
- 167-942
- Numéro d'article Distrelec:
- 304-36-976
- Référence fabricant:
- BSP171PH6327XTSA1
- Fabricant:
- Infineon
Sous-total (1 paquet de 10 unités)*
7,98 €
(TVA exclue)
9,66 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- 20 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 20 030 unité(s) expédiée(s) à partir du 04 septembre 2026
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 0,798 € | 7,98 € |
| 100 - 240 | 0,756 € | 7,56 € |
| 250 - 490 | 0,742 € | 7,42 € |
| 500 - 990 | 0,695 € | 6,95 € |
| 1000 + | 0,647 € | 6,47 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 167-942
- Numéro d'article Distrelec:
- 304-36-976
- Référence fabricant:
- BSP171PH6327XTSA1
- Fabricant:
- Infineon
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.9A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-223 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 300mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.1V | |
| Maximum Power Dissipation Pd | 1.8W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.5mm | |
| Length | 6.5mm | |
| Height | 1.6mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.9A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-223 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 300mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.1V | ||
Maximum Power Dissipation Pd 1.8W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Operating Temperature 150°C | ||
Width 3.5mm | ||
Length 6.5mm | ||
Height 1.6mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS® Series MOSFET, 1.9A Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP171PH6327XTSA1
Features & Benefits
Applications
What is the maximum drain-source voltage this component can handle?
How does this component perform at elevated temperatures?
Can it be used in battery-operated circuits?
What is the significance of the avalanche rating?
How can I ensure proper installation on the PCB?
Liens connexes
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