Infineon HEXFET Type N-Channel Power MOSFET, 355 A, 75 V Enhancement, 3-Pin TO-247 IRFP7718PBF

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N° de stock RS:
879-3325
Référence fabricant:
IRFP7718PBF
Fabricant:
Infineon
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Marque

Infineon

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

355A

Maximum Drain Source Voltage Vds

75V

Series

HEXFET

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.8mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

552nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

517W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

5.31 mm

Standards/Approvals

Lead-Free, RoHS

Length

15.87mm

Height

20.7mm

Automotive Standard

No

N-Channel Power MOSFET 60V to 80V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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