Infineon HEXFET Type N-Channel MOSFET, 186 A, 150 V Enhancement TO-247 IRF150P221AKMA1

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Sous-total (1 unité)*

7,64 €

(TVA exclue)

9,24 €

(TVA incluse)

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1 - 97,64 €
10 - 247,26 €
25 - 497,12 €
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100 +6,18 €

*Prix donné à titre indicatif

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N° de stock RS:
258-3957
Référence fabricant:
IRF150P221AKMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

186A

Maximum Drain Source Voltage Vds

150V

Package Type

TO-247

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

4.50mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

+175°C

Standards/Approvals

RoHS

Automotive Standard

No

Infineon HEXFET Series MOSFET, 150V Drain-Source Voltage, 186A Continuous Drain Current - IRF150P221AKMA1


This MOSFET is a high-current N-channel switching transistor designed for power electronics applications. It operates as an enhancement-mode device with a drain-source voltage rating suitable for medium-voltage circuits. The component tolerates broad thermal extremes, making it applicable in demanding industrial environments where thermal endurance and efficient conduction are required.

Features and Benefits:


• 4.50mΩ Rds(on) delivering reduced conduction losses
• 186A continuous drain current enabling high-current switching
• 150V Vds supporting medium-voltage power stages
• -55°C to +175°C rating allowing wide temperature operation
• 1.2V forward voltage assisting fast-recovery performance

Applications


• Suitable for high-current DC-DC converters and supplies
• Ideal for motor drive inverter output stages
• Used with power rectifier assemblies requiring fast recovery
• Can be used for industrial switching in harsh temperatures
• Suitable for surface-mount power-board implementations

What package format does it use for board mounting?


It is supplied in a TO-247 package designed for surface-mount attachment.

Is this component compliant with modern hazardous-substances regulation?


It carries RoHS approval indicating restriction of specific hazardous substances.

What channel conduction type should designers expect for gate control?


The device operates in enhancement mode as an N-channel transistor requiring positive gate drive to conduct.

What is the specified maximum temperature for continuous operation?


The upper operating limit is +175°C as specified for high-temperature use.

What is the typical forward voltage associated with recovery events?


The forward voltage for conduction and recovery is specified at 1.2V.

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