Infineon Single HEXFET 1 Type N, Type N-Channel MOSFET, 355 A, 75 V Enhancement, 3-Pin TO-247 IRFP7718PBF

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Sous-total (1 tube de 25 unités)*

53,90 €

(TVA exclue)

65,225 €

(TVA incluse)

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Unité
Prix par unité
le tube*
25 +2,156 €53,90 €

*Prix donné à titre indicatif

N° de stock RS:
145-8890
Référence fabricant:
IRFP7718PBF
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N, Type N

Maximum Continuous Drain Current Id

355A

Maximum Drain Source Voltage Vds

75V

Series

HEXFET

Package Type

TO-247

Mount Type

Through Hole, Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.8mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

517W

Maximum Gate Source Voltage Vgs

±20 V

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

552nC

Maximum Operating Temperature

175°C

Transistor Configuration

Single

Height

20.7mm

Standards/Approvals

Lead-Free, RoHS

Width

5.31 mm

Length

15.87mm

Number of Elements per Chip

1

Automotive Standard

No

Pays d'origine :
MX

N-Channel Power MOSFET 60V to 80V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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