Infineon HEXFET N-Channel MOSFET, 355 A, 75 V, 3-Pin TO-247 IRFP7718PBF

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N° de stock RS:
145-8890
Référence fabricant:
IRFP7718PBF
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

355 A

Maximum Drain Source Voltage

75 V

Package Type

TO-247

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

517 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

5.31mm

Length

15.87mm

Typical Gate Charge @ Vgs

552 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Height

20.7mm

Forward Diode Voltage

1.3V

Minimum Operating Temperature

-55 °C

Pays d'origine :
MX

N-Channel Power MOSFET 60V to 80V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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