Infineon HEXFET Type N-Channel MOSFET, 209 A, 75 V Enhancement, 3-Pin TO-247
- N° de stock RS:
- 913-3865
- Référence fabricant:
- IRFP2907PBF
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 tube de 25 unités)*
96,30 €
(TVA exclue)
116,525 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 1 925 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 25 - 25 | 3,852 € | 96,30 € |
| 50 - 100 | 3,66 € | 91,50 € |
| 125 + | 3,506 € | 87,65 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 913-3865
- Référence fabricant:
- IRFP2907PBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 209A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Series | HEXFET | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 410nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 470W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 15.9mm | |
| Width | 5.3 mm | |
| Height | 20.3mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 209A | ||
Maximum Drain Source Voltage Vds 75V | ||
Series HEXFET | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 410nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 470W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 15.9mm | ||
Width 5.3 mm | ||
Height 20.3mm | ||
Automotive Standard No | ||
- Pays d'origine :
- MX
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Liens connexes
- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-247 IRFP2907PBF
- Infineon HEXFET Type N-Channel Power MOSFET 75 V Enhancement, 3-Pin TO-247 IRFP7718PBF
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-247
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-247 IRFP4127PBF
- Infineon HEXFET N-Channel MOSFET 75 V, 3-Pin TO-247 IRFP7718PBF
- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-220 IRF2807ZPBF
- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin
