Infineon HEXFET N-Channel MOSFET, 6.5 A, 20 V Enhancement, 6-Pin Micro6 IRLMS2002TRPBF
- N° de stock RS:
- 830-3326
- Référence fabricant:
- IRLMS2002TRPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 30 unités)*
10,68 €
(TVA exclue)
12,93 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Dernier stock RS
- 180 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 30 - 120 | 0,356 € | 10,68 € |
| 150 - 270 | 0,338 € | 10,14 € |
| 300 - 720 | 0,304 € | 9,12 € |
| 750 - 1470 | 0,274 € | 8,22 € |
| 1500 + | 0,26 € | 7,80 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 830-3326
- Référence fabricant:
- IRLMS2002TRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | Micro6 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Gate Source Voltage Vgs | -12V, +12V | |
| Maximum Power Dissipation Pd | 2W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Width | 1.75mm | |
| Height | 1.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type Micro6 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Gate Source Voltage Vgs -12V, +12V | ||
Maximum Power Dissipation Pd 2W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Width 1.75mm | ||
Height 1.3mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Statut RoHS : Exempté
- Pays d'origine :
- TH
Infineon HEXFET Series MOSFET, 6.5A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRLMS2002TRPBF
This N-channel MOSFET is designed for effective performance in battery management and load management applications. Its Ability to provide low on-resistance alongside high temperature resilience contributes to efficient operation across diverse electronic systems. With state-of-the-art processing techniques, this product is Ideal for professionals in the automation, electronics, and electrical sectors.
Features & Benefits
• Surface mount design minimises PCB space usage
• Low on-resistance enhances power efficiency
• Continuous drain current capability of up to 6.5A
• Supports ±12V gate-to-source voltage for flexible control
• Efficient thermal performance reduces heat generation
Applications
• Battery management for optimal energy distribution
• Load management in various electronic devices
• Automotive requiring robust power handling
• High-efficiency power supply systems
• Renewable energy systems for energy regulation
What is the maximum continuous drain current at elevated temperatures?
At a temperature of 70°C, a continuous drain current of 5.2A can be achieved while maintaining stability under specified conditions.
What is the thermal resistance for effective performance?
The maximum junction-to-ambient thermal resistance is 62.5°C/W, ensuring effective heat dissipation during operation.
How do I ensure optimum performance during installation?
Proper thermal management and careful consideration of PCB layout are essential for optimal performance, allowing for efficient heat dissipation and reliability.
What voltage can be applied without risking breakdown?
The maximum drain-source voltage is 20V, which serves as a critical threshold to prevent unnecessary breakdown during operation.
Is there a specific thermal derating factor to consider?
Yes, the linear derating factor is 0.016W/°C, indicating that power dissipation must be adjusted based on ambient temperature to maintain reliability.
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