Infineon HEXFET Type N-Channel MOSFET, 600 mA, 200 V Enhancement, 6-Pin TSOP
- N° de stock RS:
- 919-4725
- Référence fabricant:
- IRF5801TRPBF
- Fabricant:
- Infineon
Sous-total (1 bobine de 3000 unités)*
381,00 €
(TVA exclue)
462,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 15 000 unité(s) expédiée(s) à partir du 23 mars 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,127 € | 381,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 919-4725
- Référence fabricant:
- IRF5801TRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 600mA | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TSOP | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 2.2Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 3.9nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.9mm | |
| Length | 3mm | |
| Width | 1.5 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 600mA | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TSOP | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 2.2Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 3.9nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.9mm | ||
Length 3mm | ||
Width 1.5 mm | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Liens connexes
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 6-Pin TSOP IRF5801TRPBF
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 6-Pin TSOP
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 6-Pin TSOP IRFTS8342TRPBF
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 6-Pin TSOP
- Infineon HEXFET Type P-Channel MOSFET 20 V Enhancement, 6-Pin TSOP
- Infineon HEXFET Type P-Channel MOSFET 20 V Enhancement, 6-Pin TSOP IRLTS2242TRPBF
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 6-Pin TSOP IRFTS9342TRPBF
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 7-Pin DirectFET