Infineon HEXFET Type N-Channel MOSFET, 600 mA, 200 V Enhancement, 6-Pin TSOP IRF5801TRPBF
- N° de stock RS:
- 301-631
- Numéro d'article Distrelec:
- 304-36-986
- Référence fabricant:
- IRF5801TRPBF
- Fabricant:
- Infineon
Sous-total (1 paquet de 10 unités)*
3,07 €
(TVA exclue)
3,71 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 17 060 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 + | 0,307 € | 3,07 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 301-631
- Numéro d'article Distrelec:
- 304-36-986
- Référence fabricant:
- IRF5801TRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 600mA | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TSOP | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 2.2Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3.9nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.5 mm | |
| Length | 3mm | |
| Height | 0.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 600mA | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TSOP | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 2.2Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3.9nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Operating Temperature 150°C | ||
Width 1.5 mm | ||
Length 3mm | ||
Height 0.9mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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