Infineon OptiMOS Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002H6327XTSA2

N° de stock RS:: 752-7773
Numéro d'article Distrelec:: 304-45-298
Référence fabricant:: 2N7002H6327XTSA2
Fabricant:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002H6327XTSA2

Sous-total (1 paquet de 100 unités)*

8,60 €

(TVA exclue)

10,40 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

24 000 unité(s) expédiée(s) à partir du 20 août 2026
Plus 24 000 unité(s) expédiée(s) à partir du 27 août 2026

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Unité	Prix par unité	le paquet*
100 +	0,086 €	8,60 €

*Prix donné à titre indicatif

N° de stock RS:: 752-7773
Numéro d'article Distrelec:: 304-45-298
Référence fabricant:: 2N7002H6327XTSA2
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	300mA
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOT-23
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	4Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	500mW
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	0.4nC
	Maximum Operating Temperature	150°C
	Length	2.9mm
	Height	1mm
	Standards/Approvals	No
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 300mA
	Maximum Drain Source Voltage Vds 60V
	Package Type SOT-23
	Series OptiMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 4Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 500mW
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 0.4nC
	Maximum Operating Temperature 150°C
	Length 2.9mm
	Height 1mm
	Standards/Approvals No
	Automotive Standard No

Infineon OptiMOS Series MOSFET, 60V Maximum Drain Source Voltage, 4Ω Maximum Drain Source Resistance - 2N7002H6327XTSA2

This small-signal N-channel enhancement MOSFET is designed for high-speed switching in surface-mount applications. It operates across a wide ambient range and provides a compact switching element for low-current circuits where controlled conduction and fast gate response are required.

Features and Benefits:

• 60V drain-source rating enables higher-voltage switching
• 4Ω maximum Rds(on) reduces conduction losses at low currents
• 300mA continuous drain current supports small-signal loads
• 0.4nC typical gate charge yields rapid switching transitions
• 20V gate-source tolerance allows flexible drive voltages
• 500mW power dissipation manages thermal load in compact layouts

Applications

• Suitable for level-shifting and signal switching in control units
• Ideal for battery-powered sensor interface circuits
• Used with small relays and transistor-replacement switching
• Can be used for protection circuitry in consumer electronics
• Suitable for compact power-management modules on boards

What package type should I expect for board layout planning?

It is supplied in a SOT-23 surface-mount package, easing placement on dense boards.

How does temperature influence operational capability?

It is specified to function from -55°C up to 150°C, allowing use across harsh and elevated-temperature environments.

What mechanical footprint dimensions matter for component spacing?

The component measures 2.9 x 1.3 x 1mm, useful when calculating clearance and neighbouring component placement.

How many terminals are available for schematic and routing?

The device has three pins consistent with single-channel MOSFET topology for straightforward routing.