Infineon OptiMOS Type N-Channel MOSFET, 190 mA, 100 V Enhancement, 3-Pin SOT-23 BSS123NH6327XTSA1
- N° de stock RS:
- 165-5862
- Référence fabricant:
- BSS123NH6327XTSA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 3000 unités)*
186,00 €
(TVA exclue)
225,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- 6 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,062 € | 186,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 165-5862
- Référence fabricant:
- BSS123NH6327XTSA1
- Fabricant:
- Infineon
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 190mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | OptiMOS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Maximum Power Dissipation Pd | 500mW | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.6nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 2.9mm | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 190mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Series OptiMOS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Maximum Power Dissipation Pd 500mW | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.6nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 2.9mm | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
Statut RoHS non applicable
- Pays d'origine :
- CN
Infineon OptiMOS Series MOSFET, 100V Maximum Drain Source Voltage, 10Ω Maximum Drain Source Resistance - BSS123NH6327XTSA1
Features and Benefits:
• 10Ω Rds(on) simplifies low-power protection and current limiting
• 0.6nC typical gate charge minimises switching losses
• 190mA continuous drain current supports light-load control
• 20V gate voltage rating allows compatibility with common drive levels
• 500mW power dissipation handles modest thermal loads
Applications
• Ideal for low-current load switching in control modules
• Used with level-shift interfaces in mixed-voltage systems
• Can be used for signal isolation in automotive peripherals
• Appropriate for thermal-limited power distribution networks
What temperature conditions can it withstand in operation?
What mounting and pin configuration does it use?
How does its construction influence selection for automotive projects?
How should thermal dissipation be managed on a PCB?
Liens connexes
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- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
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- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 2N7002H6327XTSA2
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