Vishay Si4178DY N-Channel MOSFET, 12 A, 30 V Enhancement, 8-Pin SOIC SI4178DY-T1-GE3
- N° de stock RS:
- 812-3205
- Référence fabricant:
- SI4178DY-T1-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 20 unités)*
10,68 €
(TVA exclue)
12,92 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 1 640 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 - 180 | 0,534 € | 10,68 € |
| 200 - 480 | 0,427 € | 8,54 € |
| 500 - 980 | 0,401 € | 8,02 € |
| 1000 - 1980 | 0,348 € | 6,96 € |
| 2000 + | 0,289 € | 5,78 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 812-3205
- Référence fabricant:
- SI4178DY-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | Si4178DY | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -25V, +25V | |
| Typical Gate Charge Qg @ Vgs | 7.5nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.85V | |
| Maximum Power Dissipation Pd | 5W | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Height | 1.55mm | |
| Standards/Approvals | RoHS | |
| Width | 4mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series Si4178DY | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -25V, +25V | ||
Typical Gate Charge Qg @ Vgs 7.5nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.85V | ||
Maximum Power Dissipation Pd 5W | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Height 1.55mm | ||
Standards/Approvals RoHS | ||
Width 4mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay Si4178DY Series MOSFET, 30V Maximum Drain Source Voltage, 12A Maximum Continuous Drain Current - SI4178DY-T1-GE3
This MOSFET is a surface-mount N-channel enhancement device designed for power switching and management in compact electronic systems. It offers moderate voltage handling and high continuous current capability, suited to applications where efficient high-current switching and thermal endurance are required. The component complies with RoHS and is intended for board-level mounting in industry and commercial designs.
Features and Benefits:
• 30V drain rating enables medium-voltage switching applications
• 12A continuous current supports high-current load control
• 33mΩ Rds(on) reduces conduction losses in power paths
• 7.5nC typical gate charge allows fast gate transitions
• 5W power dissipation helps manage thermal load in small packages
• 12A continuous current supports high-current load control
• 33mΩ Rds(on) reduces conduction losses in power paths
• 7.5nC typical gate charge allows fast gate transitions
• 5W power dissipation helps manage thermal load in small packages
Applications
• Suitable for DC-DC converter output stages
• Ideal for battery management and power distribution
• Used with motor drivers for compact actuators
• Can be used for load switching in telecom equipment
• Ideal for battery management and power distribution
• Used with motor drivers for compact actuators
• Can be used for load switching in telecom equipment
What gate voltage limitations must designers observe?
The device accepts up to 25V between gate and source, so gate drivers must remain within this limit to avoid gate-oxide stress.
How does thermal performance influence PCB layout decisions?
With a 5W dissipation rating, designers should provide adequate copper area and thermal vias beneath the SOIC footprint to improve heat-spreading and maintain junction temperature within limits.
What ambient temperature range can it operate within?
It functions reliably from -55°C to 150°C, which informs selection for applications exposed to wide thermal extremes.
What package and mounting considerations affect assembly?
The part is supplied in an SOIC-8 surface-mount package with an overall profile height of 1.55mm, so stencil design and solder-paste volume must be tuned for consistent solder joints.
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