Références fabricant

Vishay Si4178DY N-Channel MOSFET, 12 A, 30 V Enhancement, 8-Pin SOIC SI4178DY-T1-GE3

N° de stock RS:: 165-7249
Référence fabricant:: SI4178DY-T1-GE3
Fabricant:: Vishay

Vishay Si4178DY N-Channel MOSFET, 12 A, 30 V Enhancement, 8-Pin SOIC SI4178DY-T1-GE3

Actuellement indisponible

Désolés, nous ne savons pas quand ce produit sera réapprovisionné.

N° de stock RS:: 165-7249
Référence fabricant:: SI4178DY-T1-GE3
Fabricant:: Vishay

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	12A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOIC
	Series	Si4178DY
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	33mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	5W
	Typical Gate Charge Qg @ Vgs	7.5nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.85V
	Maximum Gate Source Voltage Vgs	-25V, +25V
	Maximum Operating Temperature	150°C
	Height	1.55mm
	Standards/Approvals	RoHS
	Width	4mm
	Length	5mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 12A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOIC
	Series Si4178DY
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 33mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 5W
	Typical Gate Charge Qg @ Vgs 7.5nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.85V
	Maximum Gate Source Voltage Vgs -25V, +25V
	Maximum Operating Temperature 150°C
	Height 1.55mm
	Standards/Approvals RoHS
	Width 4mm
	Length 5mm
	Automotive Standard No

Pays d'origine :: CN

Vishay Si4178DY Series MOSFET, 30V Maximum Drain Source Voltage, 12A Maximum Continuous Drain Current - SI4178DY-T1-GE3

This MOSFET is a surface-mount N-channel enhancement device designed for power switching and management in compact electronic systems. It offers moderate voltage handling and high continuous current capability, suited to applications where efficient high-current switching and thermal endurance are required. The component complies with RoHS and is intended for board-level mounting in industry and commercial designs.

Features and Benefits:

• 30V drain rating enables medium-voltage switching applications
• 12A continuous current supports high-current load control
• 33mΩ Rds(on) reduces conduction losses in power paths
• 7.5nC typical gate charge allows fast gate transitions
• 5W power dissipation helps manage thermal load in small packages

Applications

• Suitable for DC-DC converter output stages
• Ideal for battery management and power distribution
• Used with motor drivers for compact actuators
• Can be used for load switching in telecom equipment

What gate voltage limitations must designers observe?

The device accepts up to 25V between gate and source, so gate drivers must remain within this limit to avoid gate-oxide stress.

How does thermal performance influence PCB layout decisions?

With a 5W dissipation rating, designers should provide adequate copper area and thermal vias beneath the SOIC footprint to improve heat-spreading and maintain junction temperature within limits.

What ambient temperature range can it operate within?

It functions reliably from -55°C to 150°C, which informs selection for applications exposed to wide thermal extremes.

What package and mounting considerations affect assembly?

The part is supplied in an SOIC-8 surface-mount package with an overall profile height of 1.55mm, so stencil design and solder-paste volume must be tuned for consistent solder joints.

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