Vishay Si4178DY Type N-Channel MOSFET, 12 A, 30 V Enhancement, 8-Pin SOIC

N° de stock RS:: 165-7249
Référence fabricant:: SI4178DY-T1-GE3
Fabricant:: Vishay

Vishay Si4178DY Type N-Channel MOSFET, 12 A, 30 V Enhancement, 8-Pin SOIC

Sous-total (1 bobine de 2500 unités)*

565,00 €

(TVA exclue)

682,50 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 02 novembre 2026

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Unité	Prix par unité	la bobine*
2500 +	0,226 €	565,00 €

*Prix donné à titre indicatif

N° de stock RS:: 165-7249
Référence fabricant:: SI4178DY-T1-GE3
Fabricant:: Vishay

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	12A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOIC
	Series	Si4178DY
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	33mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	5W
	Typical Gate Charge Qg @ Vgs	7.5nC
	Forward Voltage Vf	0.85V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	25V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Width	4mm
	Height	1.55mm
	Length	5mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 12A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOIC
	Series Si4178DY
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 33mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 5W
	Typical Gate Charge Qg @ Vgs 7.5nC
	Forward Voltage Vf 0.85V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 25V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Width 4mm
	Height 1.55mm
	Length 5mm
	Automotive Standard No

Pays d'origine :: CN

Vishay Si4178DY Series MOSFET, 30V Maximum Drain Source Voltage, 12A Maximum Continuous Drain Current - SI4178DY-T1-GE3

This is a surface-mount N-channel MOSFET intended for power switching and high-current applications within electronic systems. It operates as an enhancement-mode transistor and is supplied in an SOIC-8 package for PCB mounting. The device supports moderate voltage switching and is suitable for designs requiring Compact power transistors with controlled gate-charge characteristics.

Features and Benefits:

• 30V maximum drain voltage enabling low-voltage power switching • 12A continuous drain current for handling high load currents • 33mΩ drain-source resistance for reduced conduction losses • 7.5nC typical gate charge for Faster switching transitions • 5W power dissipation capacity for sustained thermal performance • -55°C to 150°C operating range for wide thermal tolerance

Applications

• Suitable for DC power distribution switches in automation panels • Ideal for motor driver low-side switching in industrial drives • Used for load switching in power-management circuits for control systems • Can be used for synchronous rectification in Compact power converters • Suitable for battery protection and power-path control in machinery

What gate-voltage limits should be observed during design?

The gate-source voltage must not exceed ±25V to prevent gate-oxide stress and ensure reliable switching.

How should thermal management be approached on the PCB?

Given a 5W dissipation rating, provide adequate copper area and thermal vias to lower junction temperature during continuous high-current operation.

What pin-count and package considerations affect layout?

The device arrives in an 8-pin SOIC package, so track widths and pad spacing should accommodate surface-mount assembly and thermal conduction.

What electrical characteristic governs switching speed in Pulse applications?

The typical gate charge of 7.5nC is the key parameter influencing drive requirements and switching transition times when selecting gate drivers.