N-Channel MOSFET, 192 A, 300 V, 4-Pin SOT-227 IXYS IXFN210N30P3

N° de stock RS:: 804-7593
Référence fabricant:: IXFN210N30P3
Fabricant:: IXYS

N-Channel MOSFET, 192 A, 300 V, 4-Pin SOT-227 IXYS IXFN210N30P3

3 En stock pour livraison sous 4 jour(s)

Prix la pièce

43,58 €

(TVA exclue)

52,73 €

(TVA incluse)

Unité	Prix par unité
1 - 1	43,58 €
2 - 4	42,27 €
5 +	41,40 €

N° de stock RS:: 804-7593
Référence fabricant:: IXFN210N30P3
Fabricant:: IXYS

IXFN210N30P3, Polar3 HiPerFET Power MOSFET, N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
ESD Control Selection Guide V1

Attribut	Valeur
Channel Type	N
Maximum Continuous Drain Current	192 A
Maximum Drain Source Voltage	300 V
Package Type	SOT-227
Series	HiperFET, Polar3
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	14.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.5 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	268 nC @ 10 V
Length	38.23mm
Number of Elements per Chip	1
Width	25.07mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Height	9.6mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 192 A, 300 V, 4-Pin SOT-227 IXYS IXFN210N30P3

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series