N-Channel MOSFET, 192 A, 300 V, 4-Pin SOT-227 IXYS IXFN210N30P3

N° de stock RS:: 177-5342
Référence fabricant:: IXFN210N30P3
Fabricant:: IXYS

N-Channel MOSFET, 192 A, 300 V, 4-Pin SOT-227 IXYS IXFN210N30P3

256 En stock pour livraison sous 4 jour(s)

Prix L'unité (dans un tube de 10)

40,517 €

(TVA exclue)

49,026 €

(TVA incluse)

Unité	Prix par unité	le tube*
10 +	40,517 €	405,17 €

*prix conseillé

N° de stock RS:: 177-5342
Référence fabricant:: IXFN210N30P3
Fabricant:: IXYS

IXFN210N30P3, Polar3 HiPerFET Power MOSFET, N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier

Attribut	Valeur
Channel Type	N
Maximum Continuous Drain Current	192 A
Maximum Drain Source Voltage	300 V
Package Type	SOT-227
Series	HiperFET, Polar3
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	14.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.5 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	268 nC @ 10 V
Length	38.23mm
Transistor Material	Si
Width	25.07mm
Number of Elements per Chip	1
Height	9.6mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 192 A, 300 V, 4-Pin SOT-227 IXYS IXFN210N30P3

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series