IXYS HiperFET, Q3-Class N-Channel MOSFET, 32 A, 600 V, 3-Pin ISOPLUS247 IXFR48N60Q3

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N° de stock RS:
801-1443
Référence fabricant:
IXFR48N60Q3
Fabricant:
IXYS
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Marque

IXYS

Channel Type

N

Maximum Continuous Drain Current

32 A

Maximum Drain Source Voltage

600 V

Package Type

ISOPLUS247

Series

HiperFET, Q3-Class

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

154 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

6.5V

Maximum Power Dissipation

500 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

5.21mm

Typical Gate Charge @ Vgs

140 nC @ 10 V

Length

16.13mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

21.34mm

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode

Low RDS(on) and QG (gate charge)

Low intrinsic gate resistance

Industry standard packages

Low package inductance

High power density

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

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