IXYS Type N-Channel MOSFET, 45 A, 500 V Enhancement, 3-Pin ISOPLUS247

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Actuellement indisponible
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N° de stock RS:
920-0971
Référence fabricant:
IXFR64N50Q3
Fabricant:
IXYS
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Marque

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

500V

Package Type

ISOPLUS247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

94mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

500W

Typical Gate Charge Qg @ Vgs

145nC

Forward Voltage Vf

1.4V

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

16.13mm

Height

21.34mm

Width

5.21 mm

Standards/Approvals

No

Automotive Standard

No

Pays d'origine :
US

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode

Low RDS(on) and QG (gate charge)

Low intrinsic gate resistance

Industry standard packages

Low package inductance

High power density

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

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