IXYS Type N-Channel MOSFET, 10 A, 1 kV Enhancement, 3-Pin ISOPLUS247 IXFR15N100Q3
- N° de stock RS:
- 801-1430
- Numéro d'article Distrelec:
- 302-53-393
- Référence fabricant:
- IXFR15N100Q3
- Fabricant:
- IXYS
Offre groupée disponible
Sous-total (1 unité)*
20,28 €
(TVA exclue)
24,54 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 54 unité(s) expédiée(s) à partir du 05 janvier 2026
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Unité | Prix par unité |
|---|---|
| 1 - 4 | 20,28 € |
| 5 - 9 | 17,28 € |
| 10 - 24 | 16,52 € |
| 25 + | 15,90 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 801-1430
- Numéro d'article Distrelec:
- 302-53-393
- Référence fabricant:
- IXFR15N100Q3
- Fabricant:
- IXYS
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Package Type | ISOPLUS247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 400W | |
| Typical Gate Charge Qg @ Vgs | 64nC | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.13mm | |
| Standards/Approvals | No | |
| Height | 21.34mm | |
| Width | 5.21 mm | |
| Distrelec Product Id | 30253393 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Package Type ISOPLUS247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 400W | ||
Typical Gate Charge Qg @ Vgs 64nC | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Length 16.13mm | ||
Standards/Approvals No | ||
Height 21.34mm | ||
Width 5.21 mm | ||
Distrelec Product Id 30253393 | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Liens connexes
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