IXYS Q3-Class N-Channel Power MOSFET, 32 A, 600 V Enhancement, 3-Pin ISOPLUS247 IXFR48N60Q3
- N° de stock RS:
- 168-4710
- Référence fabricant:
- IXFR48N60Q3
- Fabricant:
- IXYS
Sous-total (1 tube de 30 unités)*
590,40 €
(TVA exclue)
714,30 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | le tube* |
|---|---|---|
| 30 + | 19,68 € | 590,40 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 168-4710
- Référence fabricant:
- IXFR48N60Q3
- Fabricant:
- IXYS
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | IXYS | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 32A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | ISOPLUS247 | |
| Series | Q3-Class | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 154mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 500W | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -30V, +30V | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.21mm | |
| Standards/Approvals | No | |
| Height | 21.34mm | |
| Length | 16.13mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque IXYS | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 32A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type ISOPLUS247 | ||
Series Q3-Class | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 154mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 500W | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -30V, +30V | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Width 5.21mm | ||
Standards/Approvals No | ||
Height 21.34mm | ||
Length 16.13mm | ||
Automotive Standard No | ||
- Pays d'origine :
- US
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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