IXYS Q3-Class Type N-Channel Power MOSFET, 32 A, 600 V Enhancement, 3-Pin ISOPLUS247 IXFR48N60Q3

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N° de stock RS:
168-4710
Référence fabricant:
IXFR48N60Q3
Fabricant:
IXYS
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Marque

IXYS

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

32A

Maximum Drain Source Voltage Vds

600V

Package Type

ISOPLUS247

Series

Q3-Class

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

154mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

14nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

500W

Maximum Gate Source Voltage Vgs

±30 V

Forward Voltage Vf

1.4V

Maximum Operating Temperature

150°C

Height

21.34mm

Standards/Approvals

No

Width

5.21 mm

Length

16.13mm

Automotive Standard

No

Pays d'origine :
US

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode

Low RDS(on) and QG (gate charge)

Low intrinsic gate resistance

Industry standard packages

Low package inductance

High power density

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

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