IXYS Type N-Channel MOSFET, 45 A, 500 V Enhancement, 3-Pin ISOPLUS247 IXFR64N50Q3

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N° de stock RS:
801-1452
Numéro d'article Distrelec:
302-53-398
Référence fabricant:
IXFR64N50Q3
Fabricant:
IXYS
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Marque

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

500V

Package Type

ISOPLUS247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

94mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

500W

Forward Voltage Vf

1.4V

Typical Gate Charge Qg @ Vgs

145nC

Maximum Operating Temperature

150°C

Length

16.13mm

Standards/Approvals

No

Height

21.34mm

Width

5.21 mm

Automotive Standard

No

Distrelec Product Id

30253398

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode

Low RDS(on) and QG (gate charge)

Low intrinsic gate resistance

Industry standard packages

Low package inductance

High power density

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

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