onsemi MegaFET N-Channel MOSFET, 16 A, 50 V Enhancement, 3-Pin TO-252 RFD16N05LSM9A
- N° de stock RS:
- 761-3574
- Référence fabricant:
- RFD16N05LSM9A
- Fabricant:
- onsemi
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
6,41 €
(TVA exclue)
7,755 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 1 185 unité(s) expédiée(s) à partir du 21 septembre 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 1,282 € | 6,41 € |
| 50 - 95 | 1,104 € | 5,52 € |
| 100 - 495 | 0,958 € | 4,79 € |
| 500 - 995 | 0,842 € | 4,21 € |
| 1000 + | 0,768 € | 3,84 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 761-3574
- Référence fabricant:
- RFD16N05LSM9A
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 50V | |
| Series | MegaFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 47mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 60W | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Height | 2.39mm | |
| Width | 6.22mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 50V | ||
Series MegaFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 47mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 60W | ||
Maximum Gate Source Voltage Vgs 10V | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Height 2.39mm | ||
Width 6.22mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
MegaFET MOSFET, Fairchild Semiconductor
The MegaFET process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilisation of silicon, resulting in outstanding performance.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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