onsemi UniFET Type N-Channel MOSFET, 16 A, 200 V Enhancement, 3-Pin TO-252 FDD18N20LZ

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Sous-total (1 paquet de 10 unités)*

14,26 €

(TVA exclue)

17,25 €

(TVA incluse)

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  • 2 250 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité
Prix par unité
le paquet*
10 - 901,426 €14,26 €
100 - 2401,229 €12,29 €
250 +1,066 €10,66 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
864-8057
Référence fabricant:
FDD18N20LZ
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

16A

Maximum Drain Source Voltage Vds

200V

Series

UniFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

130mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.4V

Maximum Power Dissipation Pd

89W

Typical Gate Charge Qg @ Vgs

30nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

2.39mm

Width

6.22 mm

Length

6.73mm

Automotive Standard

No

UniFET™ N-Channel MOSFET, Fairchild Semiconductor


UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the Planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.

UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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