onsemi RFD16N06LESM Type N-Channel MOSFET, 16 A, 60 V Enhancement, 3-Pin TO-252 RFD16N06LESM9A

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Sous-total (1 paquet de 5 unités)*

6,91 €

(TVA exclue)

8,36 €

(TVA incluse)

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le paquet*
5 +1,382 €6,91 €

*Prix donné à titre indicatif

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N° de stock RS:
802-2146
Référence fabricant:
RFD16N06LESM9A
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

16A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Series

RFD16N06LESM

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

47mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

51nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

10 V

Maximum Power Dissipation Pd

90W

Maximum Operating Temperature

175°C

Width

6.22 mm

Length

6.73mm

Standards/Approvals

No

Height

2.39mm

Automotive Standard

No

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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