onsemi MegaFET Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 325-7625
- Référence fabricant:
- RFP50N06
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 unité)*
1,93 €
(TVA exclue)
2,34 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
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- Plus 187 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 1,93 € |
| 10 + | 1,67 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 325-7625
- Référence fabricant:
- RFP50N06
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | MegaFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 125nC | |
| Maximum Power Dissipation Pd | 131W | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.83 mm | |
| Height | 9.4mm | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series MegaFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 125nC | ||
Maximum Power Dissipation Pd 131W | ||
Maximum Operating Temperature 175°C | ||
Width 4.83 mm | ||
Height 9.4mm | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Automotive Standard No | ||
MegaFET MOSFET, Fairchild Semiconductor
The MegaFET process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilisation of silicon, resulting in outstanding performance.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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