onsemi MegaFET N-Channel MOSFET, 16 A, 50 V, 3-Pin DPAK RFD16N05SM9A

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Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
166-2971
Référence fabricant:
RFD16N05SM9A
Fabricant:
onsemi
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Marque

onsemi

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

50 V

Package Type

DPAK (TO-252)

Series

MegaFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

47 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

72 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

80 nC @ 20 V

Length

6.73mm

Number of Elements per Chip

1

Width

6.22mm

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

2.39mm

MegaFET MOSFET, Fairchild Semiconductor


The MegaFET process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilisation of silicon, resulting in outstanding performance.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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