onsemi MegaFET Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-220 RFP50N06
- N° de stock RS:
- 124-1672
- Référence fabricant:
- RFP50N06
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 tube de 50 unités)*
50,60 €
(TVA exclue)
61,25 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 28 avril 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 1,012 € | 50,60 € |
| 100 - 450 | 0,857 € | 42,85 € |
| 500 - 950 | 0,746 € | 37,30 € |
| 1000 + | 0,724 € | 36,20 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 124-1672
- Référence fabricant:
- RFP50N06
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220 | |
| Series | MegaFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 125nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 131W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.4mm | |
| Standards/Approvals | No | |
| Width | 4.83 mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220 | ||
Series MegaFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 125nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 131W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 175°C | ||
Height 9.4mm | ||
Standards/Approvals No | ||
Width 4.83 mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
MegaFET MOSFET, Fairchild Semiconductor
The MegaFET process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilisation of silicon, resulting in outstanding performance.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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