Infineon SIPMOS Type N-Channel MOSFET, 350 mA, 240 V Depletion, 4-Pin SOT-223 BSP129H6327XTSA1
- N° de stock RS:
- 753-2800
- Référence fabricant:
- BSP129H6327XTSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
4,64 €
(TVA exclue)
5,615 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 5 unité(s) expédiée(s) à partir du 13 août 2026
- Plus 1 000 unité(s) expédiée(s) à partir du 01 octobre 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 0,928 € | 4,64 € |
| 50 - 120 | 0,83 € | 4,15 € |
| 125 - 245 | 0,768 € | 3,84 € |
| 250 - 495 | 0,716 € | 3,58 € |
| 500 + | 0,67 € | 3,35 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 753-2800
- Référence fabricant:
- BSP129H6327XTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 350mA | |
| Maximum Drain Source Voltage Vds | 240V | |
| Series | SIPMOS | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 20Ω | |
| Channel Mode | Depletion | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3.8nC | |
| Maximum Power Dissipation Pd | 1.8W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.6mm | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 350mA | ||
Maximum Drain Source Voltage Vds 240V | ||
Series SIPMOS | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 20Ω | ||
Channel Mode Depletion | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3.8nC | ||
Maximum Power Dissipation Pd 1.8W | ||
Maximum Operating Temperature 150°C | ||
Height 1.6mm | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS Series MOSFET, 240V Maximum Drain Source Voltage, 350mA Maximum Continuous Drain Current - BSP129H6327XTSA1
This MOSFET is a high-voltage N-channel device designed for surface-mount power switching in demanding electronic systems. It operates across an extended ambient range and is suited to applications that require controlled conduction at elevated voltages while remaining compatible with SOT-223 mounting and automotive-grade expectations.
Features and Benefits:
• 240V drain rating enables high-voltage switching applications
• 350mA continuous drain current supports low-power loads
• 20Ω maximum Rds provides predictable on-state behaviour
• 3.8nC typical gate charge facilitates efficient switching
• 1.8W power dissipation allows moderate thermal loading
• 1.2V forward voltage ensures low voltage drop in conduction
• 350mA continuous drain current supports low-power loads
• 20Ω maximum Rds provides predictable on-state behaviour
• 3.8nC typical gate charge facilitates efficient switching
• 1.8W power dissipation allows moderate thermal loading
• 1.2V forward voltage ensures low voltage drop in conduction
Applications
• Used for high-voltage signal switching in automotive subsystems
• Suitable for low-current power rails and control circuitry
• Ideal for board-level power conditioning modules
• Used with thermal management on compact surface assemblies
• Can be used for battery-management peripheral functions
• Suitable for low-current power rails and control circuitry
• Ideal for board-level power conditioning modules
• Used with thermal management on compact surface assemblies
• Can be used for battery-management peripheral functions
What gate drive constraints should I consider for switching?
The device accepts up to 20V between gate and source
design gate drivers to respect this limit and to provide adequate slew for the 3.8nC gate charge to balance switching speed and EMI.
How does temperature affect its electrical limits?
The component is specified to operate from -55°C to 150°C
designers must account for derating of power dissipation and junction-to-ambient thermal resistance when operating near the upper temperature bound.
What mounting considerations apply for thermal control?
The SOT-223 package is surface-mounted and benefits from PCB copper area for heat spreading
use a thermal pad or additional copper to maintain junction temperature under the 1.8W dissipation.
Are there specific pin-count constraints for layout?
The device presents four pins
ensure correct pad pattern and trace widths to handle the continuous drain current and to minimise parasitic resistance.
Liens connexes
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