Infineon SIPMOS N-Channel MOSFET, 350 mA, 240 V Enhancement, 4-Pin SOT-223 BSP89H6327XTSA1
- N° de stock RS:
- 445-2281
- Référence fabricant:
- BSP89H6327XTSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
4,75 €
(TVA exclue)
5,75 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- Plus 50 unité(s) expédiée(s) à partir du 23 septembre 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 0,95 € | 4,75 € |
| 50 - 245 | 0,874 € | 4,37 € |
| 250 - 495 | 0,818 € | 4,09 € |
| 500 - 1245 | 0,758 € | 3,79 € |
| 1250 + | 0,704 € | 3,52 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 445-2281
- Référence fabricant:
- BSP89H6327XTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 350mA | |
| Maximum Drain Source Voltage Vds | 240V | |
| Series | SIPMOS | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.8W | |
| Typical Gate Charge Qg @ Vgs | 4.3nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.5mm | |
| Standards/Approvals | No | |
| Height | 1.6mm | |
| Length | 6.5mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 350mA | ||
Maximum Drain Source Voltage Vds 240V | ||
Series SIPMOS | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.8W | ||
Typical Gate Charge Qg @ Vgs 4.3nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Width 3.5mm | ||
Standards/Approvals No | ||
Height 1.6mm | ||
Length 6.5mm | ||
Automotive Standard AEC-Q101 | ||
Non conforme
Infineon SIPMOS® Series MOSFET, 350 mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP89H6327XTSA1
This MOSFET is a key component for high-voltage electronic applications, providing effective switching capabilities. Utilising N-channel enhancement mode technology, it is suitable for automotive and industrial electronics, ensuring efficient operation in various conditions. The SOT-223 package enables versatile surface mounting, making it appropriate for contemporary circuit designs.
Features & Benefits
• Maximum continuous drain current of 350mA
• High drain-source voltage rating of 240V for enhanced safety
• Low gate threshold voltage improves sensitivity
• Power dissipation capability of up to 1.8W
• Ideal for logic-level applications with quick switching times
Applications
• Power management in automotive electronics
• MOSFET-based switching power supplies
• Signal amplification in electronic circuits
What is the maximum temperature range for operation?
It operates effectively within a temperature range of -55°C to +150°C, suitable for various environmental conditions.
How does the gate threshold voltage affect performance?
A low gate threshold voltage allows the MOSFET to activate at lower input voltages, enhancing efficiency in battery-operated devices.
What type of mounting is compatible with this device?
This component is designed for surface mounting in a SOT-223 package, facilitating easy integration into PCBs.
Can it handle pulsed drain currents?
Yes, it can manage pulsed drain currents of up to 1.4A, offering additional flexibility for burst power applications.
Is it suitable for use with microcontrollers?
Yes, its logic-level compatibility allows for direct interfacing with microcontroller outputs for effective control.
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