Infineon SIPMOS Type N-Channel MOSFET, 350 mA, 240 V Enhancement, 4-Pin SOT-223 BSP89H6327XTSA1
- N° de stock RS:
- 445-2281
- Référence fabricant:
- BSP89H6327XTSA1
- Fabricant:
- Infineon
Sous-total (1 paquet de 5 unités)*
3,60 €
(TVA exclue)
4,35 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- Plus 435 unité(s) expédiée(s) à partir du 03 juin 2026
- Plus 170 unité(s) expédiée(s) à partir du 10 juin 2026
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 0,72 € | 3,60 € |
| 50 - 245 | 0,662 € | 3,31 € |
| 250 - 495 | 0,62 € | 3,10 € |
| 500 - 1245 | 0,574 € | 2,87 € |
| 1250 + | 0,532 € | 2,66 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 445-2281
- Référence fabricant:
- BSP89H6327XTSA1
- Fabricant:
- Infineon
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 350mA | |
| Maximum Drain Source Voltage Vds | 240V | |
| Series | SIPMOS | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 4.3nC | |
| Maximum Power Dissipation Pd | 1.8W | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.5mm | |
| Height | 1.6mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 350mA | ||
Maximum Drain Source Voltage Vds 240V | ||
Series SIPMOS | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 4.3nC | ||
Maximum Power Dissipation Pd 1.8W | ||
Maximum Operating Temperature 150°C | ||
Length 6.5mm | ||
Height 1.6mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Non conforme
Infineon SIPMOS® Series MOSFET, 350 mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP89H6327XTSA1
Features & Benefits
Applications
What is the maximum temperature range for operation?
How does the gate threshold voltage affect performance?
What type of mounting is compatible with this device?
Can it handle pulsed drain currents?
Is it suitable for use with microcontrollers?
Liens connexes
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