Infineon SIPMOS Type N-Channel MOSFET, 350 mA, 240 V Enhancement, 4-Pin SOT-223 BSP89H6327XTSA1

N° de stock RS:: 445-2281
Référence fabricant:: BSP89H6327XTSA1
Fabricant:: Infineon

Infineon SIPMOS Type N-Channel MOSFET, 350 mA, 240 V Enhancement, 4-Pin SOT-223 BSP89H6327XTSA1

Offre groupée disponible

Sous-total (1 paquet de 5 unités)*

2,03 €

(TVA exclue)

2,455 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

En stock

435 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Plus 920 unité(s) expédiée(s) à partir du 05 janvier 2026

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Unité	Prix par unité	le paquet*
5 - 45	0,406 €	2,03 €
50 - 245	0,374 €	1,87 €
250 - 495	0,348 €	1,74 €
500 - 1245	0,324 €	1,62 €
1250 +	0,30 €	1,50 €

*Prix donné à titre indicatif

N° de stock RS:: 445-2281
Référence fabricant:: BSP89H6327XTSA1
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	350mA
	Maximum Drain Source Voltage Vds	240V
	Series	SIPMOS
	Package Type	SOT-223
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	6Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.1V
	Typical Gate Charge Qg @ Vgs	4.3nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	1.8W
	Maximum Operating Temperature	150°C
	Height	1.6mm
	Length	6.5mm
	Standards/Approvals	No
	Width	3.5 mm
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 350mA
	Maximum Drain Source Voltage Vds 240V
	Series SIPMOS
	Package Type SOT-223
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 6Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.1V
	Typical Gate Charge Qg @ Vgs 4.3nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 1.8W
	Maximum Operating Temperature 150°C
	Height 1.6mm
	Length 6.5mm
	Standards/Approvals No
	Width 3.5 mm
	Automotive Standard AEC-Q101

Non conforme

Infineon SIPMOS® Series MOSFET, 350 mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP89H6327XTSA1

This MOSFET is a key component for high-voltage electronic applications, providing effective switching capabilities. Utilising N-channel enhancement mode technology, it is suitable for automotive and industrial electronics, ensuring efficient operation in various conditions. The SOT-223 package enables versatile surface mounting, making it appropriate for contemporary circuit designs.

Features & Benefits

• Maximum continuous drain current of 350mA

• High drain-source voltage rating of 240V for enhanced safety

• Low gate threshold voltage improves sensitivity

• Power dissipation capability of up to 1.8W

• Ideal for logic-level applications with quick switching times

Applications

• Power management in automotive electronics

• MOSFET-based switching power supplies

• Signal amplification in electronic circuits

What is the maximum temperature range for operation?

It operates effectively within a temperature range of -55°C to +150°C, suitable for various environmental conditions.

How does the gate threshold voltage affect performance?

A low gate threshold voltage allows the MOSFET to activate at lower input voltages, enhancing efficiency in battery-operated devices.

What type of mounting is compatible with this device?

This component is designed for surface mounting in a SOT-223 package, facilitating easy integration into PCBs.

Can it handle pulsed drain currents?

Yes, it can manage pulsed drain currents of up to 1.4A, offering additional flexibility for burst power applications.

Is it suitable for use with microcontrollers?

Yes, its logic-level compatibility allows for direct interfacing with microcontroller outputs for effective control.