Infineon HEXFET Type N-Channel MOSFET, 104 A, 150 V Enhancement, 3-Pin TO-220 IRFB4115PBF
- N° de stock RS:
- 688-6932
- Numéro d'article Distrelec:
- 304-29-286
- Référence fabricant:
- IRFB4115PBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
5,30 €
(TVA exclue)
6,42 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 2,65 € | 5,30 € |
| 20 - 48 | 2,335 € | 4,67 € |
| 50 - 98 | 2,195 € | 4,39 € |
| 100 - 198 | 2,04 € | 4,08 € |
| 200 + | 1,885 € | 3,77 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 688-6932
- Numéro d'article Distrelec:
- 304-29-286
- Référence fabricant:
- IRFB4115PBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 104A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 11mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 380W | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 77nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Height | 9.02mm | |
| Standards/Approvals | No | |
| Width | 4.83mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 104A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 11mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 380W | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 77nC | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Height 9.02mm | ||
Standards/Approvals No | ||
Width 4.83mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 150V Maximum Drain Source Voltage, 104A Maximum Continuous Drain Current - IRFB4115PBF
This MOSFET is a high-power N-channel enhancement device designed for switching and power-conversion tasks in demanding electronic systems. It operates across a wide thermal range suitable for challenging environments and is supplied in a through-hole TO-220 package for straightforward heatsinking and assembly. The device delivers substantial continuous drain current capability and is intended for applications requiring efficient high-current handling and rapid switching performance.
Features and Benefits:
• 150V maximum drain voltage enables high-voltage switching
• 104A continuous drain current supports heavy load handling
• 11 mΩ low RDS(on) minimises conduction losses at high current
• 380W power dissipation allows sustained thermal load
• 77 nC typical gate charge enables fast switching transitions
• 1.3V forward voltage reduces diode conduction drop
• 104A continuous drain current supports heavy load handling
• 11 mΩ low RDS(on) minimises conduction losses at high current
• 380W power dissipation allows sustained thermal load
• 77 nC typical gate charge enables fast switching transitions
• 1.3V forward voltage reduces diode conduction drop
Applications
• Suitable for Infineon HEXFET 150V MOSFET TO-220 motor drivers
• Ideal for 150V 104A MOSFETs for switch-mode power supplies
• Used with high-power N-channel enhancement MOSFET circuits
• Can be used for TO-220 through-hole MOSFET 380W power stages
• Ideal for 150V 104A MOSFETs for switch-mode power supplies
• Used with high-power N-channel enhancement MOSFET circuits
• Can be used for TO-220 through-hole MOSFET 380W power stages
What gate voltage limits should designers observe?
The gate-to-source rating is ±20V, so drive circuits must keep VGS within that range to avoid gate damage.
How does the device perform over temperature extremes?
It is specified to operate from -55 °C to 175 °C, ensuring electrical characteristics are maintained across those ambient and junction conditions.
What mounting and pin-count considerations apply?
The component has three pins and is intended for through-hole mounting in a TO-220 format to facilitate secure heatsink attachment.
What channel and conduction mode does it use?
It is an N-channel device operating in enhancement mode, requiring a positive gate relative to source to turn on.
Liens connexes
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