Infineon HEXFET N-Channel MOSFET Transistor, 120 A, 40 V, 3-Pin D2PAK IRF4104SPBF

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Indisponible
RS n'aura plus ce produit en stock.
Options de conditionnement :
N° de stock RS:
651-8894
Référence fabricant:
IRF4104SPBF
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

40 V

Series

HEXFET

Package Type

D2PAK

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

140 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.67mm

Typical Gate Charge @ Vgs

68 nC @ 10 V

Width

9.65mm

Minimum Operating Temperature

-55 °C

Height

4.83mm

N-Channel Power MOSFET 40V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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