Infineon HEXFET N-Channel MOSFET, 235 A, 30 V, 3-Pin D2PAK AUIRF2903ZS

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Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
165-7675
Référence fabricant:
AUIRF2903ZS
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

235 A

Maximum Drain Source Voltage

30 V

Package Type

D2PAK (TO-263)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

231 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Width

9.65mm

Length

10.67mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

160 nC @ 10 V

Height

4.83mm

Minimum Operating Temperature

-55 °C

Pays d'origine :
MX

Automotive N-Channel Power MOSFET, Infineon


Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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