Infineon HEXFET P-Channel MOSFET, 23 A, 100 V, 3-Pin D2PAK IRF9540NSPBF

Voir l’ensemble des MOSFETs
Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
650-4198
Référence fabricant:
IRF9540NSPBF
Fabricant:
Infineon
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Marque

Infineon

Channel Type

P

Maximum Continuous Drain Current

23 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

117 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Length

10.67mm

Width

9.65mm

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

97 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

4.83mm

P-Channel Power MOSFET 100V to 150V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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