Infineon HEXFET N-Channel MOSFET, 120 A, 40 V Enhancement TO-220 IRFB7440PBF

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Sous-total (1 tube de 50 unités)*

52,50 €

(TVA exclue)

63,50 €

(TVA incluse)

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  • Plus 150 unité(s) expédiée(s) à partir du 02 novembre 2026
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Unité
Prix par unité
le tube*
50 - 501,05 €52,50 €
100 - 2000,84 €42,00 €
250 - 4500,788 €39,40 €
500 - 9500,735 €36,75 €
1000 +0,683 €34,15 €

*Prix donné à titre indicatif

N° de stock RS:
257-9359
Référence fabricant:
IRFB7440PBF
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Maximum Drain Source Resistance Rds

2.50mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

+175°C

Standards/Approvals

RoHS

Automotive Standard

No

Infineon HEXFET Series MOSFET, 40V Maximum Drain-Source Voltage, 120A Maximum Continuous Drain Current - IRFB7440PBF


This MOSFET is a through‑hole N‑channel switching device designed for high‑current power applications. It operates over a wide temperature range and conforms to RoHS environmental restrictions. The package facilitates mounting on heatsinking surfaces for power dissipation management and discrete assembly in conventional circuits.

Features and Benefits:


• 2.50mΩ low Rds(on) for reduced conduction losses
• 40V drain-source limit enabling mid‑voltage systems
• 120A continuous current handling for sustained loads
• Enhancement‑channel operation for straightforward gate drive
• 1.3V forward voltage supporting efficient body‑diode conduction

Applications


• Suitable for high‑current MOSFET use in power supplies
• Ideal for MOSFETs in motor drivers (40V, 120A)
• Used with TO‑220 through‑hole N‑channel MOSFET 40V layouts
• Can be used as a HEXFET 2.5mΩ low Rds(on) MOSFET replacement
• Employed in circuits requiring high‑temperature MOSFET operation (-55°C to 175°C)

What temperature range can it reliably operate within?


It operates across -55°C to 175°C, covering low‑temperature starts and high‑temperature operation.

What mounting method is required for thermal management?


It is supplied in a TO‑220 through‑hole package intended for attachment to external heatsinks or chassis.

What type of channel and switching mode does it use?


The device is an N‑channel enhancement‑mode transistor that requires a gate‑source drive to conduct.

Is it suitable for automotive‑qualified installations?


It is not specified as meeting automotive standards and should be evaluated against vehicle‑specific requirements.

Does it meet environmental directive requirements?


It is RoHS‑compliant, indicating restriction of certain hazardous substances.

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