Vishay SIRS Type N-Channel MOSFET, 478 A, 30 V Enhancement, 8-Pin SO-8 SIRS4302DP-T1-GE3
- N° de stock RS:
- 279-9963
- Référence fabricant:
- SIRS4302DP-T1-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
7,58 €
(TVA exclue)
9,18 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 48 | 3,79 € | 7,58 € |
| 50 - 98 | 3,49 € | 6,98 € |
| 100 - 248 | 3,085 € | 6,17 € |
| 250 - 998 | 3,04 € | 6,08 € |
| 1000 + | 2,98 € | 5,96 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 279-9963
- Référence fabricant:
- SIRS4302DP-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 478A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SO-8 | |
| Series | SIRS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00057Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 230nC | |
| Maximum Power Dissipation Pd | 208W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 478A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SO-8 | ||
Series SIRS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00057Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 230nC | ||
Maximum Power Dissipation Pd 208W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay SIRS Series MOSFET, 208W Maximum Power Dissipation, 30V Maximum Drain Source Voltage - SIRS4302DP-T1-GE3
This MOSFET is a high-current N-channel enhancement device designed for demanding power-switching environments. It operates over a wide temperature range and is supplied in a compact SO-8 surface-mount package suitable for integration into densely populated power assemblies. Conforming to RoHS, the component is intended for industrial-grade applications where thermal endurance and substantial continuous current handling are required.
Features and Benefits:
• Very low on-resistance 0.00057Ω for minimal conduction losses
• High continuous drain current 478A enabling heavy-load switching
• Drain-source voltage rating 30V for low-voltage power stages
• Power dissipation capability 208W to support high-power operation
• Gate charge 230nC for predictable switching behaviour
• Gate-source tolerance 20V to accommodate robust drive voltages
• High continuous drain current 478A enabling heavy-load switching
• Drain-source voltage rating 30V for low-voltage power stages
• Power dissipation capability 208W to support high-power operation
• Gate charge 230nC for predictable switching behaviour
• Gate-source tolerance 20V to accommodate robust drive voltages
Applications
• Suitable for high-current DC-DC converters in server racks
• Ideal for parallel MOSFET arrangements in power modules
• Used with synchronous rectification in power supplies
• Can be used for motor-drive stages requiring high peak current
• Appropriate for industrial switching regulators operating over a wide temperature range
• Ideal for parallel MOSFET arrangements in power modules
• Used with synchronous rectification in power supplies
• Can be used for motor-drive stages requiring high peak current
• Appropriate for industrial switching regulators operating over a wide temperature range
How does it perform under extreme ambient temperatures?
It is specified to operate from -55°C up to 150°C, supporting applications exposed to severe thermal conditions.
What mounting method is recommended for thermal management?
Surface-mount placement on a PCB with an appropriate copper area or thermal vias is required to dissipate up to 208W safely.
What gate drive considerations are needed for fast switching?
Expect a typical gate charge of 230nC
drivers must supply adequate peak current to achieve desired rise and fall times without excessive dissipation.
Is the device suited to automotive qualification programmes?
The component is not classified as automotive-grade
suitability for vehicle programmes should be assessed against specific qualification requirements.
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