Vishay SIRS Type N-Channel MOSFET, 478 A, 30 V Enhancement, 8-Pin SO-8 SIRS4302DP-T1-GE3
- N° de stock RS:
- 279-9963
- Référence fabricant:
- SIRS4302DP-T1-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
6,58 €
(TVA exclue)
7,96 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- 5 990 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 48 | 3,29 € | 6,58 € |
| 50 - 98 | 3,03 € | 6,06 € |
| 100 - 248 | 2,675 € | 5,35 € |
| 250 - 998 | 2,64 € | 5,28 € |
| 1000 + | 2,585 € | 5,17 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 279-9963
- Référence fabricant:
- SIRS4302DP-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 478A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SO-8 | |
| Series | SIRS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00057Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 230nC | |
| Maximum Power Dissipation Pd | 208W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 478A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SO-8 | ||
Series SIRS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00057Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 230nC | ||
Maximum Power Dissipation Pd 208W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay SIRS Series MOSFET, 30V Maximum Drain Source Voltage, 478A Maximum Continuous Drain Current - SIRS4302DP-T1-GE3
This MOSFET is a surface-mount N-channel device designed for high-current power switching in industrial electronics. It operates as an enhancement-mode transistor for controlled conduction in DC power stages and converter topologies, offering elevated temperature tolerance for demanding operating conditions.
Features and Benefits:
• 478A continuous drain current for high-load applications • 0.00057Ω low Rds(on) to minimise conduction losses • 30V drain-source rating for low-voltage power systems • 230nC typical gate charge for predictable switching behaviour • 208W power dissipation to handle substantial thermal loads • 150°C maximum junction temperature for elevated-temperature use
Applications
• Suitable for DC-DC converters in power distribution units • Ideal for motor drive stages in industrial automation • Used for high-current synchronous rectification in PSU designs • Suitable for power switching in battery management systems • Can be used for load switching in server and telecoms power racks
What mounting style does it require and how many pins are present?
It is supplied in an SO-8 surface-mount package with an 8-pin configuration for PCB assembly.
What ambient temperature range can it operate in reliably?
The device supports operation from -55°C up to its specified maximum junction temperature of 150°C.
What gate voltage limits should designers observe?
Gate-source voltage must not exceed ±20V to avoid gate oxide stress.
Is this device compliant with environmental restrictions on hazardous substances?
The component conforms to RoHS requirements for restricted materials.
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