Vishay SIRS Type N-Channel MOSFET, 478 A, 30 V Enhancement, 8-Pin SO-8 SIRS4302DP-T1-GE3

This MOSFET is a high-current N-channel enhancement device designed for demanding power-switching environments. It operates over a wide temperature range and is supplied in a compact SO-8 surface-mount package suitable for integration into densely populated power assemblies. Conforming to RoHS, the component is intended for industrial-grade applications where thermal endurance and substantial continuous current handling are required.

• Very low on-resistance 0.00057Ω for minimal conduction losses
• High continuous drain current 478A enabling heavy-load switching
• Drain-source voltage rating 30V for low-voltage power stages
• Power dissipation capability 208W to support high-power operation
• Gate charge 230nC for predictable switching behaviour
• Gate-source tolerance 20V to accommodate robust drive voltages

• Suitable for high-current DC-DC converters in server racks
• Ideal for parallel MOSFET arrangements in power modules
• Used with synchronous rectification in power supplies
• Can be used for motor-drive stages requiring high peak current
• Appropriate for industrial switching regulators operating over a wide temperature range

It is specified to operate from -55°C up to 150°C, supporting applications exposed to severe thermal conditions.

Surface-mount placement on a PCB with an appropriate copper area or thermal vias is required to dissipate up to 208W safely.

Expect a typical gate charge of 230nC

The component is not classified as automotive-grade